SiC-assisted growth of tubular graphenic cones with carbon nanotube tips
SiC-assisted growth of tubular graphenic cones with carbon nanotube tips
复制标题
碳化硅辅助生长具有碳纳米管尖端的管状石墨烯锥
DOI：
10.1016/j.carbon.2015.09.015
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发表时间：
2015-12
期刊：
影响因子：
10.9
通讯作者：
Jiang Xin
中科院分区：
文献类型：
--
作者：
Zhuang Hao;Yang Bing;Zhang Lei;Heuser Steffen;Jiang Xin
采用微波等离子体化学气相沉积技术，成功地制备了SiC辅助的碳纳米管锥状石墨烯（TGCs）。在沉积工艺之前，在基底上不需要预先存在的金属或半导体催化剂颗粒。相反，原位生长的SiC微晶作为生长的TGCs的催化剂。由于在各种衬底上容易形成SiC，该工艺与各种衬底兼容，即Si，金刚石，2 H-SiC，GaN和SiO2，但不仅限于它们。除了发展的方法，形成TGC的机制也提出了建议。当Si作为衬底时，3C-SiC微晶在表面上外延生长，这进一步引发石墨烯的外延生长，其基面平行于3C-SiC的{111}面。石墨烯的进一步膨胀受到3C-SiC微晶的限制，导致形成弯曲的石墨烯层，即洋葱状或碗状石墨烯基碳。这些弯曲的石墨烯层被认为是TGC生长的可能成核位点。气相中硼的加入促进了TGCs的生长速率和最终产率。
SiC-assisted growth of tubular graphenic cones (TGCs) with carbon nanotube tip is achieved with high yield in the microwave plasma chemical vapor deposition process. No pre-existing metal or semiconductor catalyst particles are required on the substrate prior to the deposition process. Instead, thein situgrown SiC crystallites serve as the catalyst for the growth of TGCs. Thanks to the easy formation of SiC on various substrates, the process is compatible with a wide range of substrates, i.e. Si, diamond, 2H–SiC, GaN, and SiO2, but not only limited to them. In addition to developing the approach, the mechanism for the formation of TGCs is also proposed. When Si is used as the substrate, the 3C–SiC crystallites grow epitaxially on the surface, which further initiate the epitaxial growth of graphene with its basal plane parallel to the {111} planes of 3C–SiC. The further expansion of graphene is constrained by the 3C–SiC crystallites, leading to the formation of curved graphene layers, i.e. onion-like or bowl-shaped graphene-based carbon. These curved graphene layers are believed to be the possible nucleation sites for the growth of TGCs. Inclusion of boron in the gas phase promotes the growth rates and the final yields of TGCs.
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影响因子：
10.9
作者：
N. Shang;S. Silva;Xin Jiang;P. Papakonstantinou
通讯作者：
N. Shang;S. Silva;Xin Jiang;P. Papakonstantinou
影响因子：
1.8
作者：
Nagasawa, H;Yagi, K;Kawahara, T
通讯作者：
Kawahara, T
影响因子：
10.8
作者：
Xuechun Yu;Jin Zhang;W. Choi;Jae-Young Choi;J. M. Kim;L. Gan;Zhongfan Liu
通讯作者：
Xuechun Yu;Jin Zhang;W. Choi;Jae-Young Choi;J. M. Kim;L. Gan;Zhongfan Liu
影响因子：
3.7
作者：
Guangyu Zhang;X. Bai;E. Wang;Yufeng Guo;Wanlin Guo
通讯作者：
Guangyu Zhang;X. Bai;E. Wang;Yufeng Guo;Wanlin Guo
DOI：
10.1002/pssa.201532183
发表时间：
2015-11
期刊：
physica status solidi (a)
影响因子：
--
作者：
A. Taylor;P. Ashcheulov;M. Čada;L. Fekete;P. Hubík;L. Klimša;J. Olejníček;Z. Remeš;I. Jirka;P. Janíček;E. Bedel-Pereira;J. Kopeček;J. Mistrik;V. Mortet
通讯作者：
A. Taylor;P. Ashcheulov;M. Čada;L. Fekete;P. Hubík;L. Klimša;J. Olejníček;Z. Remeš;I. Jirka;P. Janíček;E. Bedel-Pereira;J. Kopeček;J. Mistrik;V. Mortet