Direct and integrating sampling in terahertz receivers from wafer-scalable InAs nanowires.
Direct and integrating sampling in terahertz receivers from wafer-scalable InAs nanowires.
复制标题
DOI：
10.1038/s41467-023-44345-1
复制
发表时间：
2024-01-02
影响因子：
16.6
通讯作者：
Johnston, Michael B.
中科院分区：
文献类型：
--
作者：
Peng, Kun;Morgan, Nicholas Paul;Wagner, Ford M.;Siday, Thomas;Xia, Chelsea Qiushi;Dede, Didem;Boureau, Victor;Piazza, Valerio;Fontcuberta i Morral, Anna;Johnston, Michael B.
太赫兹（THz）辐射将在未来几十年的无线通信，传感，光谱和成像技术中发挥关键作用。因此，太赫兹发射器和接收器的设计应该简化，并小型化，成为一种商品。在这项工作中，我们展示了可扩展的光电导太赫兹接收器的基础上，水平生长的InAs纳米线（NW）嵌入在一个蝴蝶结天线，在室温下工作。纳米线提供短的光电导寿命，同时保持高的电子迁移率。与窄带隙体器件相比，大的表面积与体积比还确保了低暗电流，从而确保了低热噪声。通过设计NW形态，NW表现出极大不同的光电导寿命，使接收器能够通过直接和积分采样模式检测THz光子。宽带NW接收器与整个电信波长范围（1.2-1.6 μm）的选通激光器兼容，因此是廉价的基于全光纤的THz时域光谱和成像系统的理想选择。这些器件通过光刻确定性地定位，因此可扩展到晶圆级，为新一代商业THz接收器开辟了道路。作者报告了晶圆可扩展InAs纳米线的纳米面工程，使THz光电探测器能够以直接或集成采样模式运行，其性能与商业InP技术相当。
Terahertz (THz) radiation will play a pivotal role in wireless communications, sensing, spectroscopy and imaging technologies in the decades to come. THz emitters and receivers should thus be simplified in their design and miniaturized to become a commodity. In this work we demonstrate scalable photoconductive THz receivers based on horizontally-grown InAs nanowires (NWs) embedded in a bow-tie antenna that work at room temperature. The NWs provide a short photoconductivity lifetime while conserving high electron mobility. The large surface-to-volume ratio also ensures low dark current and thus low thermal noise, compared to narrow-bandgap bulk devices. By engineering the NW morphology, the NWs exhibit greatly different photoconductivity lifetimes, enabling the receivers to detect THz photons via both direct and integrating sampling modes. The broadband NW receivers are compatible with gating lasers across the entire range of telecom wavelengths (1.2–1.6 μm) and thus are ideal for inexpensive all-optical fibre-based THz time-domain spectroscopy and imaging systems. The devices are deterministically positioned by lithography and thus scalable to the wafer scale, opening the path for a new generation of commercial THz receivers. Authors report on nanofacet engineering of wafer‐scalable InAs nanowires enabling the operation of THz photodetectors in direct or integrating sampling mode, with performance comparable to commercial InP technology.
登录
查看更多内容
DOI：
10.1007/s10762-019-00639-4
发表时间：
2019-11-26
影响因子：
2.9
作者：
Ellrich, F.;Bauer, M.;Molter, D.
通讯作者：
Molter, D.
影响因子：
4
作者：
AUSTON, DH;CHEUNG, KP;SMITH, PR
通讯作者：
SMITH, PR
影响因子：
3.5
作者：
Dede, Didem;Glas, Frank;Morral, Anna Fontcuberta i
通讯作者：
Morral, Anna Fontcuberta i
影响因子：
4
作者：
Demichel, O.;Heiss, M.;Fontcuberta i Morral, A.
通讯作者：
Fontcuberta i Morral, A.
影响因子：
4
作者：
Biermann, K;Nickel, D;Künzel, H
通讯作者：
Künzel, H