3D electron-beam writing at sub-15 nm resolution using spider silk as a resist.
3D electron-beam writing at sub-15 nm resolution using spider silk as a resist.
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DOI：
10.1038/s41467-021-25470-1
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发表时间：
2021-08-26
影响因子：
16.6
通讯作者：
Tao TH
中科院分区：
文献类型：
--
作者：
Qin N;Qian ZG;Zhou C;Xia XX;Tao TH
Electron beam lithography (EBL) is renowned to provide fabrication resolution in the deep nanometer scale. One major limitation of current EBL techniques is their incapability of arbitrary 3d nanofabrication. Resolution, structure integrity and functionalization are among the most important factors. Here we report all-aqueous-based, high-fidelity manufacturing of functional, arbitrary 3d nanostructures at a resolution of sub-15 nm using our developed voltage-regulated 3d EBL. Creating arbitrary 3d structures of high resolution and high strength at nanoscale is enabled by genetically engineering recombinant spider silk proteins as the resist. The ability to quantitatively define structural transitions with energetic electrons at different depths within the 3d protein matrix enables polymorphic spider silk proteins to be shaped approaching the molecular level. Furthermore, genetic or mesoscopic modification of spider silk proteins provides the opportunity to embed and stabilize physiochemical and/or biological functions within as-fabricated 3d nanostructures. Our approach empowers the rapid and flexible fabrication of heterogeneously functionalized and hierarchically structured 3d nanocomponents and nanodevices, offering opportunities in biomimetics, therapeutic devices and nanoscale robotics. Electron beam lithography (EBL) is renowned to provide fabrication resolution in the deep nanometer scale but their incapability of arbitrary 3D nanofabrication poses a major limitation to the technique. Here, the authors demonstrate a manufacturing technique of functional 3d nanostructures at a resolution of sub-15 nm using voltage-regulated 3d EBL.
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