Annealing temperature effects on (111)-oriented BiFeO3 thin films deposited on Pt/Ti/SiO2/Si by chemical solution deposition
Annealing temperature effects on (111)-oriented BiFeO3 thin films deposited on Pt/Ti/SiO2/Si by chemical solution deposition
复制标题
退火温度对化学溶液沉积Pt/Ti/SiO2/Si上(111)取向BiFeO3薄膜的影响
DOI：
10.1039/c5tc02379c
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发表时间：
2015-10
影响因子：
6.4
通讯作者：
Yuping Sun
中科院分区：
文献类型：
--
作者：
Linhua Jin;Xianwu Tang;Dongpo Song;Renhuai Wei;Jie Yang;Jianming Dai;Wenhai Song;Xuebin Zhu;Yuping Sun
作为研究最多的多铁性材料，（111）取向的BiFeO 3（BFO）薄膜由于在（111）面的最高极化而被期望。在硅晶片上实现大面积（111）取向的BFO膜对于用硅技术实现的困难阻碍了BFO膜的发展。本文报道了退火温度对在Pt（111）/Ti/SiO2/Si衬底上化学溶液沉积（CSD）BFO薄膜的影响。BFO薄膜具有较强的（111）取向，具有畸变的菱面体结构和R3 c空间群。研究了退火温度对合金组织和性能的影响。在低温退火的薄膜中获得了致密且无裂纹的表面。可以获得相对高的室温剩余极化2 Pr（120-140 μC cm−2），同时具有低泄漏（在200 kV cm−1时为10−5 A cm−2）。扫描电子显微镜和透射电子显微镜表明，这是一个可行的路线，大面积（111）取向的BFO薄膜上的硅基晶片与高2 Pr使用低成本的溶液处理。
As the most-studied multiferroic material, (111)-oriented BiFeO3 (BFO) thin films are desirable due to the highest polarization in the (111) plane. The difficulty of achieving large-area (111)-oriented BFO films on silicon wafers towards implementation with silicon technology has hindered the development of BFO films. Herein, we report the annealing temperature effects on chemical solution deposition (CSD) derived BFO films on Pt(111)/Ti/SiO2/Si substrates without any buffer layer. The derived BFO films shows a strong (111) orientation with a distorted rhombohedral structure and R3c space group. The annealing temperature effects on the microstructures as well as the properties were investigated. A dense and crack-free surface was obtained in the low-temperature annealed films. Relatively high room-temperature remnant polarization 2Pr (120–140 μC cm−2) could be obtained with low leakage (∼10−5 A cm−2 at 200 kV cm−1). Scanning electron microscopy and transmission electron microscopy showed that this is an available route for fabricating large-area (111)-oriented BFO films on silicon-based wafers with high 2Pr using low-cost solution processing.
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影响因子：
4
作者：
Í. Bretos;R. Jiménez;Carmen Gutiérrez-Lázaro;I. Montero;M. Calzada
通讯作者：
Í. Bretos;R. Jiménez;Carmen Gutiérrez-Lázaro;I. Montero;M. Calzada
影响因子：
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作者：
Y. J. Lee;Chun-Sheng Liang;Jenn‐Ming Wu
通讯作者：
Y. J. Lee;Chun-Sheng Liang;Jenn‐Ming Wu
影响因子：
3.9
作者：
Qingqing Ke;Wenlai Lu;Xuelian Huang;John Wang
通讯作者：
Qingqing Ke;Wenlai Lu;Xuelian Huang;John Wang
影响因子：
4
作者：
Das, R. R.;Kim, D. M.;Streiffer, S. K.
通讯作者：
Streiffer, S. K.
影响因子：
1.5
作者：
Keita Sone;H. Naganuma;T. Miyazaki;T. Nakajima;S. Okamura
通讯作者：
Keita Sone;H. Naganuma;T. Miyazaki;T. Nakajima;S. Okamura