New Insights into Intrinsic Point Defects in V(2)VI(3) Thermoelectric Materials.
New Insights into Intrinsic Point Defects in V(2)VI(3) Thermoelectric Materials.
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对 V2VI3 热电材料本征点缺陷的新见解
DOI:
10.1002/advs.201600004
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发表时间:
2016-07
期刊:
影响因子:
15.1
通讯作者:
He, Jian
中科院分区:
文献类型:
--
作者:
Zhu, Tiejun;Hu, Lipeng;Zhao, Xinbing;He, Jian
Defects and defect engineering are at the core of many regimes of material research, including the field of thermoelectric study. The 60‐year history of V2VI3 thermoelectric materials is a prime example of how a class of semiconductor material, considered mature several times, can be rejuvenated by better understanding and manipulation of defects. This review aims to provide a systematic account of the underexplored intrinsic point defects in V2VI3 compounds, with regard to (i) their formation and control, and (ii) their interplay with other types of defects towards higher thermoelectric performance. We herein present a convincing case that intrinsic point defects can be actively controlled by extrinsic doping and also via compositional, mechanical, and thermal control at various stages of material synthesis. An up‐to‐date understanding of intrinsic point defects in V2VI3 compounds is summarized in a (χ, r)‐model and applied to elucidating the donor‐like effect. These new insights not only enable more innovative defect engineering in other thermoelectric materials but also, in a broad context, contribute to rational defect design in advanced functional materials at large.
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影响因子:
3.2
作者:
GOLDSMID, HJ
通讯作者:
GOLDSMID, HJ
影响因子:
4
作者:
CAILLAT, T;GAILLIARD, L;SCHERRER, S
通讯作者:
SCHERRER, S
影响因子:
2.1
作者:
FRANGIS, N;KUYPERS, S;AMELINCKX, S
通讯作者:
AMELINCKX, S
影响因子:
--
作者:
DELVES, RT;HAZELDEN, DW;BOWLEY, AE
通讯作者:
BOWLEY, AE
影响因子:
4
作者:
FLEURIAL, JP;GAILLIARD, L;SCHERRER, S
通讯作者:
SCHERRER, S