Coexistence of negative photoconductivity and hysteresis in semiconducting graphene
Coexistence of negative photoconductivity and hysteresis in semiconducting graphene
复制标题
半导体石墨烯中负光电导性和磁滞现象的共存
DOI：
10.1063/1.4948313
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发表时间：
2016-04
期刊：
影响因子：
1.6
通讯作者：
Zhuo Chen
中科院分区：
文献类型：
--
作者：
Jingguo Hu;Jingguo Hu;Zhuo Chen;Zhuo Chen
溶液处理的石墨烯量子点具有中等的带隙，这使得它们成为光电子器件的有希望的候选者。然而，负光电导（NPC）和滞后发生在光电转换过程中可能是有害的GQD基器件的性能。到目前为止，它们的起源和关系仍然难以捉摸。在这里，我们调查实验的NPC和滞后GQD的起源。通过比较GQD在不同相对湿度条件下的滞后和光电导，我们能够证明NPC和滞后在GQD中共存，两者都归因于表面吸附水分的载流子捕获效应。我们还表明，GQD可以表现出积极的光电导性与三个数量级的减少后的滞后干燥过程和随后的封装。考虑到普遍的水分吸附，我们的研究结果可能为半导体石墨烯基和各种基于溶液的光电器件的商业化铺平道路。
Solution-processed graphene quantum dots (GQDs) possess a moderate bandgap, which make them a promising candidate for optoelectronics devices. However, negative photoconductivity (NPC) and hysteresis that happen in the photoelectric conversion process could be harmful to performance of the GQDs-based devices. So far, their origins and relations have remained elusive. Here, we investigate experimentally the origins of the NPC and hysteresis in GQDs. By comparing the hysteresis and photoconductance of GQDs under different relative humidity conditions, we are able to demonstrate that NPC and hysteresis coexist in GQDs and both are attributed to the carrier trapping effect of surface adsorbed moisture. We also demonstrate that GQDs could exhibit positive photoconductivity with three-order-of-magnitude reduction of hysteresis after a drying process and a subsequent encapsulation. Considering the pervasive moisture adsorption, our results may pave the way for a commercialization of semiconducting graphene-based and diverse solution-based optoelectronic devices.
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