A Digital Adaptive Driving Scheme for eGaN HEMTs in VHF Converters
A Digital Adaptive Driving Scheme for eGaN HEMTs in VHF Converters
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VHF 转换器中 eGaN HEMT 的数字自适应驱动方案
DOI：
10.1109/tpel.2016.2619911
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发表时间：
2017-08
影响因子：
6.7
通讯作者：
Ren Xiaoyong
中科院分区：
文献类型：
--
作者：
Zhang Zhi-Liang;Dong Zhou;Zou Xue-Wen;Ren Xiaoyong
由于埃根控制和同步整流（SR）HEMT的栅极驱动时序失配，具有传统驱动方案的甚高频（VHF）转换器在整个输入电压范围内遭受严重的效率下降。提出了一种数字自适应驱动方案，在输入电压范围内有效地调整控制和SR栅极驱动信号。通过建立状态空间模型，可以根据不同的输入电压精确预测驱动时序，并相应地调整栅极驱动信号。提出了一种通过选择级联高速缓冲器来提高时间分辨率的高时间分辨率电路。该驱动方案显著降低了埃根高电子迁移率晶体管的高频开关损耗和反向导通时间，并在整个输入电压范围内保持高效率。采用印刷电路板（PCB）制造的空心Transformer，构建了一个30 MHz VHF SR反激器。在18 V输入、5V/10 W输出条件下，实测效率达到80.0%。在24 V输入和5 V/10 W输出下，所提出的解决方案将效率从使用传统驱动器的72.9%提高到75.1%（提高了2.2%）。
Very-high-frequency (VHF) converters with the conventional driving scheme suffer from serious efficiency drop over entire input voltage range due to gate drive timing mismatch of the eGaN control and synchronous rectification (SR) HEMTs. A digital adaptive driving scheme is proposed to adjust the control and SR gate drive signals efficiently over input voltage range. A state-space model is derived to predict drive timing precisely according to different input voltage and adjust the gate drive signals correspondingly. A high time resolution circuit to improve time resolution by selecting cascaded high-speed buffers is proposed. With the proposed driving scheme, high-frequency switching loss and reverse conduction time of eGaN HEMTs are reduced significantly to maintain high efficiency over entire input voltage range. A 30-MHz VHF SR flyback with the printed circuit board (PCB) fabrication air-core transformer was built. With 18-V input and 5-V/10-W output, the measured efficiency realizes 80.0%. With 24-V input and 5-V/10-W output, the proposed solution improves the efficiency from 72.9% using the conventional driver to 75.1% (an improvement of 2.2%).
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作者：
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DOI：
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发表时间：
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期刊：
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影响因子：
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