Dual-wavelength visible photodetector based on vertical (In,Ga)N nanowires grown by molecular beam epitaxy.
Dual-wavelength visible photodetector based on vertical (In,Ga)N nanowires grown by molecular beam epitaxy.
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基于分子束外延生长的垂直(In,Ga)N纳米线的双波长可见光电探测器
作者：
由于蓝光和红光探测器的广泛应用，双波长（蓝光/红光）光电探测器具有广阔的市场前景。在这项工作中，基于垂直（In，Ga）N纳米线和石墨烯的双波长光电探测器已经成功地制作。通过使用透明石墨烯，可以清楚地检测蓝色和红色响应。响应的上升时间可达3.5ms。此外，还分析了双响应的内在机理。双波长响应的主要原因可能是纳米线的直径不同，导致不同的In组分内（In，Ga）N部分。
Due to the wide applications of blue and red photodetectors, dual-wavelength (blue/red) photodetectors are promising for future markets. In this work, a dual-wavelength photodetector based on vertical (In,Ga)N nanowires and graphene has been fabricated successfully. By using the transparent graphene, both blue and red responses can be clearly detected. The rise time of response can reach 3.5 ms. Furthermore, the underlying mechanism of double responses has also been analyzed. The main reason contributing to the dual-wavelength response could be the different diameters of nanowires, leading to different In components within (In,Ga)N sections.
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影响因子：
10.8
作者：
Fernandez-Garrido, Sergio;Kong, Xiang;Brandt, Oliver
通讯作者：
Brandt, Oliver
GaN基谐振腔光电二极管的高响应度和波长选择性
影响因子：
9
作者：
Li, Jing;Yang, Chao;Zhao, Lixia
通讯作者：
Zhao, Lixia
影响因子：
3.5
作者：
Spies, Maria;Polaczynski, Jakub;Monroy, Eva
通讯作者：
Monroy, Eva
DOI：
10.1007/s00339-020-04067-3
发表时间：
2020-12-01
影响因子：
2.7
作者：
Devi, M. Dharani;Juliet, A. Vimala;AIFaify, S.
通讯作者：
AIFaify, S.
影响因子：
35.6
作者：
Pathak, Parth H.;Feng, Xiaotao;Mohapatra, Prasant
通讯作者：
Mohapatra, Prasant