Design and Experimental Verification of an Efficient SSCB Based on CS-MCT
Design and Experimental Verification of an Efficient SSCB Based on CS-MCT
复制标题
基于CS-MCT的高效SSCB设计与实验验证
DOI：
10.1109/tpel.2020.2987418
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发表时间：
2020-11
影响因子：
6.7
通讯作者：
Zhang Bo
中科院分区：
文献类型：
--
作者：
Xu Xiaorui;Chen Wanjun;Tao Hong;Zhou Qi;Li Zhaoji;Zhang Bo
提出了一种新型固态断路器（SSCB），用于直流微电网保护，它采用阴极短路型MOS控制晶闸管（CS - MCT）作为主开关以实现高功率效率。所提出的SSCB具有带有单次触发特性且尺寸紧凑的换流电路，这使得SSCB实现了简单的跳闸过程以及易于集成。此外，SSCB在主开关导通之前对换流电容充电并提供分断能力。这避免了在主开关导通初期发生故障时断路器可能出现的故障，从而为SSCB提供了高度可靠且稳健的分断能力。通过数学建模详细讨论了电路分析和设计准则。此外，通过600V/15kW的样机实验验证了SSCB的实用价值和可行性，并通过仿真在直流微电网中进一步验证。
A novel solid state circuit breaker (SSCB), which uses the cathode-short MOS-controlled thyristor (CS-MCT) as the main switch to achieve high power efficiency, is proposed for direct current (dc) microgrid protection. The proposed SSCB features the commutating circuit with a one-shot triggering characteristic and a compact size, which makes the SSCB realize a simple tripping process and easy integration. Furthermore, the SSCB charges the commutating capacitor and offers the interruption capability before the main switch is turned on. This avoids the possible failure of the breaker under the fault that occurs at the initial stage of the turn-on of the main switch, thus providing highly reliable and robust interruption capability for the SSCB. Circuit analysis and design guidelines are discussed in detail through the mathematical modeling. Moreover, the practical value and the feasibility of the SSCB are validated by 600-V/15-kW prototype experiments and further verified in dc microgrids through simulations.
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影响因子：
6.7
作者：
Davood Keshavarzi;E. Farjah;T. Ghanbari
通讯作者：
Davood Keshavarzi;E. Farjah;T. Ghanbari
DOI：
10.1109/apec.2011.5744620
发表时间：
2011-03
期刊：
2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)
影响因子：
--
作者：
D. Urciuoli;V. Veliadis;H. Ha;V. Lubomirsky
通讯作者：
D. Urciuoli;V. Veliadis;H. Ha;V. Lubomirsky
DOI：
10.1109/ispsd.2016.7520840
发表时间：
2016-06
期刊：
2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
影响因子：
--
作者：
Wanjun Chen;Chao Liu;Xuefeng Tang;L. Lou;W. Cheng;Hongquan Liu;Qi Zhou;Zhaoji Li;Bo Zhang
通讯作者：
Wanjun Chen;Chao Liu;Xuefeng Tang;L. Lou;W. Cheng;Hongquan Liu;Qi Zhou;Zhaoji Li;Bo Zhang
影响因子：
6.7
作者：
V. A. Sankaran;J. Hudgins;W. Portnoy
通讯作者：
V. A. Sankaran;J. Hudgins;W. Portnoy
影响因子：
6.7
作者：
Davood Keshavarzi;T. Ghanbari;E. Farjah
通讯作者：
Davood Keshavarzi;T. Ghanbari;E. Farjah