High interfacial thermal conductance across heterogeneous GaN/graphene interface
High interfacial thermal conductance across heterogeneous GaN/graphene interface
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异质 GaN/石墨烯界面具有高界面热导
DOI：
10.1016/j.apsusc.2021.152344
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发表时间：
2021-12
影响因子：
6.7
通讯作者：
Chen Xue-Kun
中科院分区：
文献类型：
--
作者：
Wu Dan;Ding Hua;Fan Zhi-Qiang;Jia Pin-Zhen;Xie Hai-Qing;Chen Xue-Kun
氮化镓 (GaN) 基高电子迁移率晶体管 (HEMT) 由于其高功率和高频电子应用（例如 5G 无线网络和发光二极管）而引起了广泛的研究关注。同时，这些HEMT的输出功率密度特别高，在近结处形成的强焦耳自热热点严重制约了器件的性能和可靠性。因此，GaN基HEMT迫切需要散热。多层石墨烯具有高导热性且易于制备，因此与 GaN 集成以改善器件热管理具有重要意义。在这项工作中，我们使用非平衡分子动力学模拟研究了 GaN/石墨烯界面的界面热导 (ITC)。结果表明，0.6% 的点缺陷浓度可导致 ITC 增强 2.4 倍。此外，通过施加~1GPa跨面压力，ITC值可以增加到520.7MWm−2K−1，这接近于外延生长的GaN/ZnO界面的测量结果。对振动光谱和光谱声子传输进行详细分析，以帮助了解 ITC 的显着增强。此外，ITC还可以通过外部温度和h-BN嵌入来调节。我们在此提出的研究结果为解决基于 GaN 的电子设备中的热管理问题提供了重要指导。
Gallium nitride (GaN)-based high-electron-mobility transistors (HEMTs) have attracted significant research attention because of their high-power and high-frequency electronics applications such as 5G wireless networks and light-emitting diodes. Meanwhile, the output power density of these HEMTs is particularly high, and strong Joule self-heating hot spots formed at the near-junction seriously restricts device performance and reliability. Hence, heat removal is in urgent demand for GaN-based HEMTs. Multilayer graphene, featuring high thermal conductivity and being easily prepared, is of interest for integration with GaN to improve the device thermal management. In this work, we have investigated the interfacial thermal conductance (ITC) across GaN/graphene interface using nonequilibrium molecular dynamics simulations. The results show that a 0.6% point-defect concentration results in 2.4-fold enhancement in ITC. Moreover, the ITC value can be increased up to 520.7 MWm−2K−1by applying ∼ 1GPa cross-plane pressure, which is close to the measurement result for epitaxially grown GaN/ZnO interface. Detailed analyses of vibrational spectra and spectral phonon transmission are performed to help understand the significant enhancement of ITC. Furthermore, the ITC could be also regulated by the external temperature and h-BN intercalation. Our findings presented here provide important guidelines for solving the thermal management issue in GaN-based electronic devices.
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影响因子：
4
作者：
M. Kazan
通讯作者：
M. Kazan
影响因子：
10.8
作者：
Ren, Weijun;Ouyang, Yulou;Chen, Jie
通讯作者：
Chen, Jie
影响因子：
3.7
作者：
Sadanandam Namsani;J. Singh
通讯作者：
Sadanandam Namsani;J. Singh
GaN基石墨烯热传输特性的衬底效应和温度依赖性
DOI：
10.1016/j.ijheatmasstransfer.2021.121266
发表时间：
2021-07
影响因子：
5.2
作者：
Bao Wenlong;Wang Zhaoliang;Chen Guofu
通讯作者：
Chen Guofu
影响因子：
4.1
作者：
PLIMPTON, S
通讯作者：
PLIMPTON, S