Interface structure and strain controlled Pt nanocrystals grown at side facet of MoS2 with critical size
Interface structure and strain controlled Pt nanocrystals grown at side facet of MoS2 with critical size
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临界尺寸 MoS2 侧面生长的界面结构和应变控制 Pt 纳米晶体
DOI：
10.1007/s12274-022-4449-5
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发表时间：
2022-05
期刊：
影响因子：
9.9
通讯作者：
Rongming Wang
中科院分区：
文献类型：
--
作者：
Yuchen Zhu;Yinghui Sun;Hongzhou Zhang;Yang He;Wei Liu;Rongming Wang
过渡金属在二维材料上的异质结构通过各种界面相互作用表现出独特的物理和化学性质。已经确定的是，在界面附近的原子结构和应变确定的能带结构和声子模式的异质结，调节这种异质结构的光学和电学性质。因此，金属载体界面工程是获得纳米晶体所需性能的一种已证明的方法。然而，对界面结构的基本理解仍然难以捉摸，并且尚未实现对相互作用的精确控制。本文探讨了超声分散还原氯铂酸钾制备的MoS 2负载Pt纳米晶的界面调节。利用像差校正透射电子显微镜对Pt-MoS 2异质结界面进行了系统的研究。确定了三种具有不同原子配置的Pt-MoS 2界面。Pt纳米晶体内的应变对支撑MoS 2的原子构型敏感，其调节Pt纳米晶体的尺寸。这些结果提供了对调谐应变的见解，为精确控制2D半导体异质结构铺平了道路。
The heterostructure of transition metal nanocrystal on two-dimensional (2D) materials exhibits unique physical and chemical properties through various interfacial interactions. It has been established that the atomic structure and strain in the vicinity of the interface determine the band structure and phonon modes of the nanocrystal, regulating the optical and electrical properties of such heterostructures. Hence, metal—support interfacial engineering is a demonstrated approach to acquiring desired properties of the nanocrystals. However, a fundamental understanding of the interfacial structures remains elusive and precise control of the interactions has yet achieved. Herein, we explore the regulation of interface on MoS2 supported Pt nanocrystals which were prepared by reducing ultrasonic dispersed potassium chloroplatinate. The Pt-MoS2 heterostructure interface was systematically studied by aberration corrected transmission electron microscopy. Three types of Pt-MoS2 interfaces with distinct atomic configurations were identified. The strain within the Pt nanocrystals is sensitive to the atomic configuration of the supporting MoS2, which regulates the size of the Pt nanocrystals. These results provide insights on tuning of nanocrystal strain, paving the way for precise control of 2D semiconductor heterostructures.
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影响因子：
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作者：
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DOI：
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DOI：
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发表时间：
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期刊：
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