Modulation of electronic transport properties in armchair phosphorene nanoribbons by doping and edge passivation.
Modulation of electronic transport properties in armchair phosphorene nanoribbons by doping and edge passivation.
复制标题
DOI：
10.1038/s41598-017-13212-7
复制
发表时间：
2017-10-09
影响因子：
4.6
通讯作者：
Liu Y
中科院分区：
文献类型：
--
作者：
Guo C;Wang T;Xia C;Liu Y
采用第一性原理计算方法研究了IV族原子（C，Si，Ge）掺杂的扶手椅型磷烯纳米带（APNR）的电子结构和输运性质.结果表明，C、Si、Ge的掺杂可以诱导APNR发生从半导体到金属的转变。在掺杂的APNR系统中的负微分电阻（NDR）行为相对于掺杂浓度和边缘钝化类型是稳健的。然而，它们的电流峰值位置和峰谷比（PVR）值与掺杂浓度和边缘钝化类型相关。特别地，对于C、Si掺杂的APNR，当在具有F和H边缘钝化的APNR中掺杂浓度低时，可以观察到PVR（105-108）的低偏置NDR行为。这些结果对未来低功耗纳米电子器件的制备具有重要的指导意义。
The electronic structures and transport properties of group IV atoms (C, Si, Ge)-doped armchair phosphorene nanoribbons (APNRs) are investigated using first-principles calculations, considering different edge passivation. The results show that the C, Si, Ge dopants can induce the transition occur from semiconductor to metal in the APNRs. The negative differential resistance (NDR) behavior in the doped APNR system is robust with respect to the doping concentration and edge passivation type. However, their current peak positions and peak-to-valley ratio (PVR) values are correlated with doping concentration and edge passivation type. In particular, for the C, Si-doped APNRs, the low bias NDR behavior with the PVR (105–108) can be observed when doping concentration is low in the APNRs with the F and H edge passivation. These results may play an important role for the fabrication of future low power consumption nano-electronic devices.
登录
查看更多内容
影响因子：
1.6
作者：
Chakrabarty, Soubhik;Wasey, A. H. M. Abdul;Das, G. P.
通讯作者：
Das, G. P.
影响因子：
4
作者：
Li, Suchun;Gan, Chee Kwan;Quek, Su Ying
通讯作者：
Quek, Su Ying
影响因子：
3.7
作者：
Maity, Ajanta;Singh, Akansha;Kanhere, Dilip G.
通讯作者：
Kanhere, Dilip G.
影响因子：
4
作者：
Mikhelashvili, V.;Meyler, B.;Eisenstein, G.
通讯作者：
Eisenstein, G.
影响因子：
3.3
作者：
An, Yipeng;Wei, Xinyuan;Yang, Zhongqin
通讯作者：
Yang, Zhongqin