Carrier Depletion near the Grain Boundary of a SiC Bicrystal
Carrier Depletion near the Grain Boundary of a SiC Bicrystal
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SiC 双晶晶界附近的载流子耗尽
DOI：
10.1038/s41598-019-54525-z
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发表时间：
2019
影响因子：
4.6
通讯作者：
Y. Ikuhara
中科院分区：
文献类型：
--
作者：
Y. W. Kim;E. Tochigi;J. Tatami;Y. H. Kim;S. H. Jang;S. Javvaji;J. Jung;K. J. Kim;Y. Ikuhara
采用扩散连接法制备了碳化硅（SiC）双晶，并利用扫描透射电子显微镜观察了其晶界。通过扫描非线性介电显微镜（SNDM）证实了SiC单晶的n型导电性。用SNDM对样品的掺杂分析表明，界面是电绝缘体，具有约2 μ m厚的载流子耗尽层。由于在扩散接合期间从天然氧化物膜并入氧，载流子耗尽层含有比体晶体更高数量的氧杂质。密度泛函理论计算的态密度作为带隙的函数也支持这些发现。在p型多晶SiC陶瓷中也证实了载流子耗尽层的存在。这些结果表明，SiC陶瓷的电导率主要是由晶界附近的载流子耗尽，而不是晶界本身。
Silicon carbide (SiC) bicrystals were prepared by diffusion bonding, and their grain boundary was observed using scanning transmission electron microscopy. The n-type electrical conductivity of a SiC single crystal was confirmed by scanning nonlinear dielectric microscopy (SNDM). Dopant profiling of the sample by SNDM showed that the interface acted as an electrical insulator with a ~2-μm-thick carrier depletion layer. The carrier depletion layer contained a higher number of oxygen impurities than the bulk crystals due to the incorporation of oxygen from the native oxide film during diffusion bonding. Density functional theory calculations of the density of states as a function of the bandgap also supported these findings. The existence of a carrier depletion layer was also confirmed in a p-type polycrystalline SiC ceramic. These results suggest that the electrical conductivity of SiC ceramics was mostly affected by carrier depletion near the grain boundary rather than the grain boundary itself.
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