High-density horizontally aligned growth of carbon nanotubes with Co nanoparticles deposited by arc-discharge plasma method
High-density horizontally aligned growth of carbon nanotubes with Co nanoparticles deposited by arc-discharge plasma method
复制标题
电弧放电等离子体法沉积钴纳米粒子高密度水平定向生长碳纳米管
DOI：
10.1063/1.2969290
复制
发表时间：
2008
影响因子：
4
通讯作者：
T. Mizutani
中科院分区：
文献类型：
--
作者：
D. Phokharatkul;Y. Ohno;H. Nakano;S. Kishimoto;T. Mizutani
采用电弧放电等离子体法沉积钴纳米颗粒，在石英衬底上生长了高密度水平排列的单壁碳纳米管。在室温下，通过单脉冲电弧放电形成密度高达6.0× 1010 cm-2的Co纳米颗粒。排列的纳米管的平均密度为0.88 μm−1。利用定向纳米管制作了具有高k顶栅结构的多沟道纳米管场效应晶体管。该器件具有高性能、常导通和n型导电特性，无需任何掺杂工艺。当沟道宽度为100μm时，获得了1.3mA的高导通电流和0.23mS的大击穿电压。常开和n型属性是由于固定的正电荷在HfO 2栅极绝缘体和在接口。
High-density horizontally aligned single-walled carbon nanotubes are grown on a quartz substrate using Co nanoparticles deposited by arc-discharge plasma method. The Co nanoparticles with a density as high as 6.0×1010cm−2 are formed by a single pulse of arc discharge at room temperature. The density of the aligned nanotubes is ∼8μm−1 in average. Multichannel nanotube field-effect transistors with a high-k top-gate structure are fabricated with aligned nanotubes. The devices show high-performance, normally on, and n-type conduction property without any doping process. A high on current of 1.3mA and a large transconductance of 0.23mS for a channel width of 100μm are obtained. The normally on and n-type property is attributed to fixed positive charges in the HfO2 gate insulator and at the interfaces.
影响因子：
2.8
作者：
Ago, H;Nakamura, K;Tsuji, M
通讯作者：
Tsuji, M
影响因子：
3.5
作者：
Nosho, Y.;Ohno, Y.;Mizutani, T.
通讯作者：
Mizutani, T.