Interactions and non-magnetic fractional quantization in one-dimension.

Interactions and non-magnetic fractional quantization in one-dimension.
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DOI:
10.1063/5.0061921
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发表时间:
2021-09-13
影响因子:
4
通讯作者:
Pepper M
Pepper M
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
Kumar S;Pepper M

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在这篇透视文章中,我们介绍了相互作用对一维(1D)半导体量子线载流子输运性质影响的最新进展,特别是在没有磁场的情况下,长期预测的电导分数量子化的出现。三十多年前,研究表明,通过一维系统的传输导致了由N·2e2/h给出的整数量化电导,其中N是允许的能级数(N = 1,2,3, …)。最近的实验表明,较弱的限制势和较低的载流子浓度为电子之间的强相互作用提供了试验台。这一结果导致电子分布被重新配置为Z字形组件,出人意料地发现,该组件表现出以e2/h为单位的电导主要在1/6、2/5、1/4和1/2处的量子化。这些分数态可能看起来类似于分数量子霍尔效应中看到的分数态;然而,系统不具有填充因子,并且它们在物理原因的性质上不同。这些态可能会为新兴的拓扑量子计算方案带来希望,因为它们可以通过具有不同特性的栅极电压进行控制。
In this Perspective article, we present recent developments on interaction effects on the carrier transport properties of one-dimensional (1D) semiconductor quantum wires fabricated using the GaAs/AlGaAs system, particularly the emergence of the long predicted fractional quantization of conductance in the absence of a magnetic field. Over three decades ago, it was shown that transport through a 1D system leads to integer quantized conductance given by N·2e2/h, where N is the number of allowed energy levels (N = 1, 2, 3, …). Recent experiments have shown that a weaker confinement potential and low carrier concentration provide a testbed for electrons strongly interacting. The consequence leads to a reconfiguration of the electron distribution into a zigzag assembly which, unexpectedly, was found to exhibit quantization of conductance predominantly at 1/6, 2/5, 1/4, and 1/2 in units of e2/h. These fractional states may appear similar to the fractional states seen in the Fractional Quantum Hall Effect; however, the system does not possess a filling factor and they differ in the nature of their physical causes. The states may have promise for the emergent topological quantum computing schemes as they are controllable by gate voltages with a distinct identity.
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