Versatile direct-writing of dopants in a solid state host through recoil implantation.
Versatile direct-writing of dopants in a solid state host through recoil implantation.
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DOI：
10.1038/s41467-020-18749-2
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发表时间：
2020-10-07
影响因子：
16.6
通讯作者：
Toth M
中科院分区：
文献类型：
--
作者：
Fröch JE;Bahm A;Kianinia M;Mu Z;Bhatia V;Kim S;Cairney JM;Gao W;Bradac C;Aharonovich I;Toth M
在纳米尺度上改变材料性质对于纳米电子学、纳米光子学和量子信息中的器件至关重要。例如，宽带隙材料中的光学活性缺陷是实现量子技术的关键组成部分。在这里，我们展示了使用反冲注入，一种利用加速离子的动量转移的方法，用于多功能和无掩模材料掺杂。作为一个概念的证明，我们直接写入阵列的光学活性缺陷到金刚石通过动量转移从一个100+聚焦离子束（FIB）到薄膜的IV族掺杂剂预沉积到金刚石表面。我们进一步证明了该技术的灵活性，通过将稀土离子注入到单模光纤的芯中。我们最终表明，所提出的技术产生超浅掺杂剂分布定位到顶部几纳米的目标表面，并使用它来实现子50 nm的位置精度。该方法适用于具有复杂几何形状的非平面衬底，并且其适用于诸如原子级薄材料的电子和磁性掺杂以及半导体器件的近表面态的工程等应用。直接写入活性缺陷是迈向可扩展量子技术的一个非常受欢迎的步骤。在这里，作者展示了一种灵活的方法，通过将动量从离子束转移到预先沉积在金刚石表面上的薄膜（使用Si，Ge，Sn或Pb薄膜）或纤维芯（使用Eu）。
Modifying material properties at the nanoscale is crucially important for devices in nano-electronics, nanophotonics and quantum information. Optically active defects in wide band gap materials, for instance, are critical constituents for the realisation of quantum technologies. Here, we demonstrate the use of recoil implantation, a method exploiting momentum transfer from accelerated ions, for versatile and mask-free material doping. As a proof of concept, we direct-write arrays of optically active defects into diamond via momentum transfer from a Xe+ focused ion beam (FIB) to thin films of the group IV dopants pre-deposited onto a diamond surface. We further demonstrate the flexibility of the technique, by implanting rare earth ions into the core of a single mode fibre. We conclusively show that the presented technique yields ultra-shallow dopant profiles localised to the top few nanometres of the target surface, and use it to achieve sub-50 nm positional accuracy. The method is applicable to non-planar substrates with complex geometries, and it is suitable for applications such as electronic and magnetic doping of atomically-thin materials and engineering of near-surface states of semiconductor devices. Direct writing of active defects is a much sought-after step towards scalable quantum technologies. Here, the authors show a flexible approach by transferring momentum from an ion beam to thin films pre-deposited onto diamond surfaces (using films of Si, Ge, Sn or Pb) or fiber cores (using Eu).
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影响因子：
4.6
作者：
Iwasaki T;Ishibashi F;Miyamoto Y;Doi Y;Kobayashi S;Miyazaki T;Tahara K;Jahnke KD;Rogers LJ;Naydenov B;Jelezko F;Yamasaki S;Nagamachi S;Inubushi T;Mizuochi N;Hatano M
通讯作者：
Hatano M
影响因子：
16.6
作者：
Luehmann, Tobias;John, Roger;Pezzagna, Sebastien
通讯作者：
Pezzagna, Sebastien
影响因子：
2.2
作者：
Burnett, T. L.;Kelley, R.;Withers, P. J.
通讯作者：
Withers, P. J.
影响因子：
10.8
作者：
Bali, Rantej;Wintz, Sebastian;Fassbender, Juergen
通讯作者：
Fassbender, Juergen
影响因子：
5
作者：
Bassim, Nabil;Scott, Keana;Giannuzzi, Lucille A.
通讯作者：
Giannuzzi, Lucille A.