Correlated Electron Materials and Field Effect Transistors for Logic: A Review
Correlated Electron Materials and Field Effect Transistors for Logic: A Review
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逻辑相关电子材料和场效应晶体管：回顾
DOI：
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
S. Ramanathan
中科院分区：
文献类型：
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作者：
You Zhou;S. Ramanathan
相关电子系统是现代凝聚态科学的核心，在这里出现了许多有趣的物理现象，如金属-绝缘体转变和高温度超导性。最近的努力集中在静电掺杂这类材料，以探索潜在的物理性质而不引入无序，以及建立场效应晶体管，可能补充传统的半导体金属氧化物半导体场效应晶体管（MOSFET）技术。本文综述了相关电子材料和利用相关氧化物作为通道层的三端场效应器件中的金属-绝缘体跃迁机制。我们首先描述了固体中的电子-无序相互作用，电子-声子相互作用和/或电子相关如何改变材料的电子特性并导致金属-绝缘体转变。然后分析了在场效应晶体管中利用这些跃迁的实验成果及其基本原理。指出在这些显示相变的材料中，相关电子系统在逻辑技术中具有广阔的应用前景。此外，从电子相关中出现的新现象可以在场效应器件中实现新功能。然后，我们简要回顾了非常规的静电门控技术，如离子液体门控和铁电门控，这些技术可以使相关材料中的超大载流子积累密度，从而导致相变。最后，对信息处理相关氧化物电子学的发展前景和未来研究方向进行了简要的讨论。
Correlated electron systems are among the centerpieces of modern condensed matter sciences, where many interesting physical phenomena, such as metal-insulator transition and high-T c superconductivity appear. Recent efforts have been focused on electrostatic doping of such materials to probe the underlying physics without introducing disorder as well as to build field-effect transistors that may complement conventional semiconductor metal-oxide-semiconductor field effect transistor (MOSFET) technology. This review focuses on metal-insulator transition mechanisms in correlated electron materials and three-terminal field effect devices utilizing such correlated oxides as the channel layer. We first describe how electron-disorder interaction, electron-phonon interaction, and/or electron correlation in solids could modify the electronic properties of materials and lead to metal-insulator transitions. Then we analyze experimental efforts toward utilizing these transitions in field effect transistors and their underlying principles. It is pointed out that correlated electron systems show promise among these various materials displaying phase transitions for logic technologies. Furthermore, novel phenomena emerging from electronic correlation could enable new functionalities in field effect devices. We then briefly review unconventional electrostatic gating techniques, such as ionic liquid gating and ferroelectric gating, which enables ultra large carrier accumulation density in the correlated materials which could in turn lead to phase transitions. The review concludes with a brief discussion on the prospects and suggestions for future research directions in correlated oxide electronics for information processing.
影响因子：
10.8
作者：
Liao L;Bai J;Cheng R;Lin YC;Jiang S;Huang Y;Duan X
通讯作者：
Duan X
影响因子：
10.8
作者：
Liao L;Bai J;Cheng R;Lin YC;Jiang S;Qu Y;Huang Y;Duan X
通讯作者：
Duan X