Van der Waals epitaxial growth and optoelectronics of large-scale WSe(2)/SnS(2) vertical bilayer p-n junctions.
Van der Waals epitaxial growth and optoelectronics of large-scale WSe(2)/SnS(2) vertical bilayer p-n junctions.
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大规模WSe2/SnS2垂直双层p-n结的范德华外延生长和光电子学
DOI：
10.1038/s41467-017-02093-z
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发表时间：
2017-12-04
影响因子：
16.6
通讯作者：
Pan A
中科院分区：
文献类型：
--
作者：
Yang T;Zheng B;Wang Z;Xu T;Pan C;Zou J;Zhang X;Qi Z;Liu H;Feng Y;Hu W;Miao F;Sun L;Duan X;Pan A
高质量的二维原子层状p-n异质结是高性能集成光电子学的关键。迄今为止的研究主要限于剥离和重新堆叠的薄片，并且这种异质结构的受控生长仍然是一个重大挑战。本文报道了在SiO_2/Si衬底上直接货车德瓦尔斯外延生长大尺寸WSe_2/SnS_2垂直双层p-n结，横向尺寸可达毫米级。多电极场效应晶体管已经集成在单个异质结构双层上。电输运测量表明，结的场效应晶体管显示出10−14 A的超低关态漏电流和高达107的最高开关比。光电特性显示出突出的光响应，具有500 μs的快速响应时间，快于所有直接生长的垂直2D异质结构。高质量货车德瓦耳斯结的直接生长标志着向高性能集成光电子器件和系统迈出了重要一步。大面积无缺陷二维半导体层的生长对于高性能p-n结应用是一个巨大的挑战。Yang等人采用两步货车德瓦尔斯外延法制备了毫米级的WSe 2/SnS 2垂直异质结，显示出优异的光电性能。
High-quality two-dimensional atomic layered p–n heterostructures are essential for high-performance integrated optoelectronics. The studies to date have been largely limited to exfoliated and restacked flakes, and the controlled growth of such heterostructures remains a significant challenge. Here we report the direct van der Waals epitaxial growth of large-scale WSe2/SnS2 vertical bilayer p–n junctions on SiO2/Si substrates, with the lateral sizes reaching up to millimeter scale. Multi-electrode field-effect transistors have been integrated on a single heterostructure bilayer. Electrical transport measurements indicate that the field-effect transistors of the junction show an ultra-low off-state leakage current of 10−14 A and a highest on–off ratio of up to 107. Optoelectronic characterizations show prominent photoresponse, with a fast response time of 500 μs, faster than all the directly grown vertical 2D heterostructures. The direct growth of high-quality van der Waals junctions marks an important step toward high-performance integrated optoelectronic devices and systems. Growth of large area and defect-free two-dimensional semiconductor layers for high-performance p–n junction applications has been a great challenge. Yang et al. prepare millimeter-scaled WSe2/SnS2 vertical heterojunctions by two-step van der Waals epitaxy, which show excellent optoelectronic properties.
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