An InGaN/GaN Superlattice to Enhance the Performance of Green LEDs: Exploring the Role of V-Pits.
An InGaN/GaN Superlattice to Enhance the Performance of Green LEDs: Exploring the Role of V-Pits.
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用于增强绿色 LED 性能的 InGaN/GaN 超晶格：探索 V 坑的作用
DOI：
10.3390/nano8070450
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发表时间：
2018-06-21
期刊：
影响因子：
--
通讯作者：
Ding X
中科院分区：
文献类型：
--
作者：
Liu M;Zhao J;Zhou S;Gao Y;Hu J;Liu X;Ding X
尽管InGaN/GaN超晶格(SL)有助于提高GaN基发光二极管(LED)的性能，但它在提高绿色LED效率方面的作用仍然是一个悬而未决的问题。在这里，我们研究了V坑嵌入的InGaN/GaN SL对GaN基绿色发光二极管光电特性的影响。我们用扫描电子显微镜(SEM)和室温阴极发光(CL)测量相结合的方法，记录了生长在0和24对InGaN/GaN SL上的InGaN/GaN多量子阱(MQW)的一系列发光性质，证明了在穿透位错(TD)周围存在V-凹坑形成的势垒。我们发现，V坑直径的增加会导致V坑势垒高度的增加。我们的实验数据表明，V凹坑嵌入的24对InGaN/GaN SL可以有效地抑制载流子向非复合中心的横向扩散。结果表明，采用V坑嵌入InGaN/GaN SL层后，在注入电流为20 mA时，绿色LED的外量子效率(EQE)提高了29.6%。此外，V型凹坑越大，反向漏电流越小。
Despite the fact that an InGaN/GaN superlattice (SL) is useful for enhancing the performance of a GaN-based light-emitting diode (LED), its role in improving the efficiency of green LEDs remains an open question. Here, we investigate the influence of a V-pits-embedded InGaN/GaN SL on optical and electrical properties of GaN-based green LEDs. We recorded a sequence of light emission properties of InGaN/GaN multiple quantum wells (MQWs) grown on a 0- and 24-pair InGaN/GaN SL by using scanning electron microscopy (SEM) in combination with a room temperature cathodoluminescence (CL) measurement, which demonstrated the presence of a potential barrier formed by the V-pits around threading dislocations (TDs). We find that an increase in V-pit diameter would lead to the increase of V-pit potential barrier height. Our experimental data suggest that a V-pits-embedded, 24-pair InGaN/GaN SL can effectively suppress the lateral diffusion of carriers into non-recombination centers. As a result, the external quantum efficiency (EQE) of green LEDs is improved by 29.6% at an injection current of 20 mA after implementing the V-pits-embedded InGaN/GaN SL layer. In addition, a lower reverse leakage current was achieved with larger V-pits.
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DOI：
10.3390/nano8040244
发表时间：
2018-04-16
期刊：
Nanomaterials (Basel, Switzerland)
影响因子：
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