High aspect ratio diamond nanosecond laser machining.
High aspect ratio diamond nanosecond laser machining.
复制标题
高深宽比金刚石纳秒激光加工。
DOI：
10.1007/s00339-023-06755-2
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发表时间：
2023
影响因子：
2.7
通讯作者：
Gershenfeld, Neil
中科院分区：
文献类型：
--
作者：
Golota, Natalie C.;Preiss, David;Fredin, Zachary P.;Patil, Prashant;Banks, Daniel P.;Bahri, Salima;Griffin, Robert G.;Gershenfeld, Neil
关键词：
激光加工金刚石已成为制造下一代微电子和量子器件的重要技术。然而，在金刚石中实现低锥度、高纵横比结构仍然是一个挑战。我们证明了脉冲能量，脉冲数和照射轮廓上实现的纵横比与532 nm纳秒激光加工的影响。使用Ib型HPHT金刚石的冲击孔钻孔观察到强和温和的烧蚀制度。在冲击钻孔下，使用10，000个脉冲实现了22：1的最大纵横比。为了达到平均40：1和高达66：1的纵横比，采用旋转辅助钻孔，使用> 2 M脉冲累积。我们还展示了在10：1纵横比管中通过斜坡脉冲能量加工获得0.1°锥角的方法。最后，激光诱导损伤的影响进行了研究，使用共焦拉曼光谱观察强激光照射后的拉伸应变增加高达36%。然而，我们报告说，在应用600 °C热处理后，诱导应变减少了高达~ 50%，观察到的应变相当均匀。在线版本包含补充材料，可通过10.1007/s 00339 -023-06755-2获得。
Laser processing of diamond has become an important technique for fabricating next generation microelectronic and quantum devices. However, the realization of low taper, high aspect ratio structures in diamond remains a challenge. We demonstrate the effects of pulse energy, pulse number and irradiation profile on the achievable aspect ratio with 532 nm nanosecond laser machining. Strong and gentle ablation regimes were observed using percussion hole drilling of type Ib HPHT diamond. Under percussion hole drilling a maximum aspect ratio of 22:1 was achieved with 10,000 pulses. To reach aspect ratios on average 40:1 and up to 66:1, rotary assisted drilling was employed using > 2 M pulse accumulations. We additionally demonstrate methods of obtaining 0.1° taper angles via ramped pulse energy machining in 10:1 aspect ratio tubes. Finally, effects of laser induced damage are studied using confocal Raman spectroscopy with observation of up to 36% increase in tensile strain following strong laser irradiation. However, we report that upon application of 600 °C heat treatment, induced strain is reduced by up to ~ 50% with considerable homogenization of observed strain. The online version contains supplementary material available at 10.1007/s00339-023-06755-2.
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影响因子：
4.1
作者：
Martin, Aiden A.;Bishop, James;Bunn, Thomas L.
通讯作者：
Bunn, Thomas L.
影响因子：
7.4
作者：
Joseph, Maxim B.;Bitziou, Eleni;Macpherson, Julie V.
通讯作者：
Macpherson, Julie V.
影响因子：
4.6
作者：
Low, DKY;Li, L;Byrd, PJ
通讯作者：
Byrd, PJ
DOI：
10.1073/pnas.0808230105
发表时间：
2008-11-18
影响因子：
11.1
作者：
Meng, Yu-fei;Yan, Chih-shiue;Hemley, Russell J.
通讯作者：
Hemley, Russell J.
影响因子：
64.8
作者：
BUNDY, FP;HALL, HT;WENTORF, RH
通讯作者：
WENTORF, RH