Effects of Growth Conditions on Structural Properties of ZnO Nanostructures on Sapphire Substrate by Metal-Organic Chemical Vapor Deposition.
Effects of Growth Conditions on Structural Properties of ZnO Nanostructures on Sapphire Substrate by Metal-Organic Chemical Vapor Deposition.
复制标题
DOI：
10.1007/s11671-009-9257-2
复制
发表时间：
2009-01-23
影响因子：
--
通讯作者：
Horng RH
中科院分区：
文献类型：
--
作者：
Wu CC;Wuu DS;Lin PR;Chen TN;Horng RH
使用二乙基锌 (DEZn) 和氧气 (O2) 作为化学源，在 500 °C 下通过金属有机化学气相沉积在蓝宝石衬底上生长 ZnO。讨论了腔室压力和O2/DEZn比对ZnO结构性能的影响。研究发现，腔室压力对ZnO的形貌有显着影响，可以产生金字塔状、蠕虫状和柱状晶等多种结构的ZnO。当腔室压力保持在10 Torr时，可以获得175角秒的ZnO(002)的最低半峰全宽。另一方面，通过降低DEZn流量，可以提高ZnO的晶体质量。在高 DEZn 流量下，ZnO 纳米墙网络结构在不使用任何金属催化剂的情况下在蓝宝石基板上垂直生长。这表明较高的 DEZn 流速会促进三维生长模式，从而导致表面粗糙度增加。因此，ZnO 表面的一些尖端可以作为成核位点。在这项工作中，我们的 ZnO 纳米墙网络的生长过程据说遵循高 DEZn 流量下的自催化生长机制。
ZnO was grown on sapphire substrate by metal–organic chemical vapor deposition using the diethylzinc (DEZn) and oxygen (O2) as source chemicals at 500 °C. Influences of the chamber pressure and O2/DEZn ratio on the ZnO structural properties were discussed. It was found that the chamber pressure has significant effects on the morphology of ZnO and could result in various structures of ZnO including pyramid-like, worm-like, and columnar grain. When the chamber pressure was kept at 10 Torr, the lowest full width at half-maximum of ZnO (002) of 175 arc second can be obtained. On the other hand, by lowering the DEZn flow rate, the crystal quality of ZnO can be improved. Under high DEZn flow rate, the ZnO nanowall-network structures were found to grow vertically on the sapphire substrate without using any metal catalysts. It suggests that higher DEZn flow rate promotes three-dimensional growth mode resulting in increased surface roughness. Therefore, some tip on the ZnO surface could act as nucleation site. In this work, the growth process of our ZnO nanowall networks is said to follow the self-catalyzed growth mechanism under high-DEZn flow rate.
登录
查看更多内容
影响因子：
--
作者：
Wang H;Zhang Z;Wang X;Mo Q;Wang Y;Zhu J;Wang H;Yang F;Jiang Y
通讯作者：
Jiang Y
影响因子：
3.2
作者：
Man, B. Y.;Yang, C.;Xue, C. S.
通讯作者：
Xue, C. S.
影响因子：
4
作者：
Zhang, BP;Binh, NT;Usami, N
通讯作者：
Usami, N
影响因子：
--
作者：
Zhou, H. L.;Chua, S. J.;Tripathy, S.
通讯作者：
Tripathy, S.
影响因子：
3.2
作者：
Reiser, A.;Ladenburger, A.;Thonke, K.
通讯作者：
Thonke, K.