Selective Growth of Vertical-aligned ZnO Nanorod Arrays on Si Substrate by Catalyst-free Thermal Evaporation
Selective Growth of Vertical-aligned ZnO Nanorod Arrays on Si Substrate by Catalyst-free Thermal Evaporation
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DOI：
10.1007/s11671-008-9156-y
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发表时间：
2008-08-21
影响因子：
--
通讯作者：
Jiang Y
中科院分区：
文献类型：
--
作者：
Wang H;Zhang Z;Wang X;Mo Q;Wang Y;Zhu J;Wang H;Yang F;Jiang Y
通过热蒸发纯ZnO粉末，在覆盖有ZnO种子层的Si衬底上成功地合成了高密度的垂直排列的ZnO纳米棒阵列，直径在80-250 nm之间。结果表明，ZnO种子层的晶体质量对ZnO纳米棒阵列的形貌、取向、晶体和光学质量有很大影响，这一点通过场发射扫描电子显微镜、X射线衍射、透射电子显微镜和光致发光测试等表征手段得到了证实。对于具有纤锌矿结构的ZnO种子层，ZnO纳米棒垂直于衬底生长，具有完美的纤锌矿结构，强的近带边发射，和可忽略的深能级发射。在多晶ZnO种子层上合成的纳米棒具有无规取向、宽直径和弱的深能级发射。本文通过控制晶种层的晶体质量，提供了一种无碳无金的大规模合成垂直取向ZnO纳米棒阵列的方法。
By thermal evaporation of pure ZnO powders, high-density vertical-aligned ZnO nanorod arrays with diameter ranged in 80–250 nm were successfully synthesized on Si substrates covered with ZnO seed layers. It was revealed that the morphology, orientation, crystal, and optical quality of the ZnO nanorod arrays highly depend on the crystal quality of ZnO seed layers, which was confirmed by the characterizations of field-emission scanning electron microscopy, X-ray diffraction, transmission electron microscopy, and photoluminescence measurements. For ZnO seed layer with wurtzite structure, the ZnO nanorods grew exactly normal to the substrate with perfect wurtzite structure, strong near-band-edge emission, and neglectable deep-level emission. The nanorods synthesized on the polycrystalline ZnO seed layer presented random orientation, wide diameter, and weak deep-level emission. This article provides a C-free and Au-free method for large-scale synthesis of vertical-aligned ZnO nanorod arrays by controlling the crystal quality of the seed layer.
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作者：
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