Photocatalysis‐Induced Nanopores toward Highly Reliable Organic Electrochemical Metallization Memory
Photocatalysis‐Induced Nanopores toward Highly Reliable Organic Electrochemical Metallization Memory
复制标题
光催化诱导纳米孔实现高度可靠的有机电化学金属化存储器
DOI:
10.1002/aelm.202200246
复制
发表时间:
2022-05
影响因子:
6.2
通讯作者:
Yichun Liu
中科院分区:
文献类型:
--
作者:
Tao Zeng;Riya Su;Ye Tao;Ya Lin;Xuanyu Shan;Yankun Cheng;Zhongqiang Wang;Xiaoning Zhao;Haiyang Xu;Yichun Liu
Organic electrochemical metallization (ECM) memory that possesses high reliable switching performance is in great demand for the future smart wearable and flexible electronics. The resistive switching (RS) behavior of organic ECM memory is determined by the micro-morphology evolution of metal conductive filaments (CFs) during the operating process. However, the morphology controllability of CFs is generally deteriorated by their random distribution and unexpected overgrowth. Herein, a kind of nanoporous PVC/TiO2 nanocomposite is developed using photocatalytic method for improving the RS reliability of organic ECM memory. The introduction of engineered nanopores can effectively simplify the CFs morphology to obtain excellent uniformity, good retention, and low cycling degradation. In addition, taking advantage of the multilevel RS behavior and 200 × 200 memristive array artificial neural network (ANN), alphabetic data storage and image pattern recognition are successfully realized. The proposed approach is expected to provide novel platforms for the advance of highly reliable flexible electronics and ANN for intelligence applications.
登录
查看更多内容
影响因子:
3.5
作者:
I. Valov;R. Waser;J. Jameson;M. Kozicki
通讯作者:
I. Valov;R. Waser;J. Jameson;M. Kozicki
影响因子:
4.6
作者:
Cheng Z;Liu L;Xu S;Lu M;Wang X
通讯作者:
Wang X
影响因子:
16.6
作者:
Zhang B;Chen W;Zeng J;Fan F;Gu J;Chen X;Yan L;Xie G;Liu S;Yan Q;Baik SJ;Zhang ZG;Chen W;Hou J;El-Khouly ME;Zhang Z;Liu G;Chen Y
通讯作者:
Chen Y
影响因子:
6.2
作者:
Chen, Qingyu;Lin, Min;Huang, Ru
通讯作者:
Huang, Ru
影响因子:
41.2
作者:
Goswami, Sreetosh;Matula, Adam J.;Venkatesan, T.
通讯作者:
Venkatesan, T.