MPPT Circuit Using Time Exponential Rate Perturbation and Observation for Enhanced Tracking Efficiency for a Wide Resistance Range of Thermoelectric Generator
MPPT Circuit Using Time Exponential Rate Perturbation and Observation for Enhanced Tracking Efficiency for a Wide Resistance Range of Thermoelectric Generator
复制标题
MPPT 电路使用时间指数率扰动和观察来增强热电发电机宽电阻范围的跟踪效率
DOI：
10.3390/app11104650
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发表时间：
2021-05
影响因子：
2.7
通讯作者：
Song Zhitang
中科院分区：
文献类型：
--
作者：
Miao Jie;Chen Houpeng;Lei Yu;Lv Yi;Liu Weili;Song Zhitang
热电发电机（TEG）因其结构简单、体积小、热能丰富、无污染和噪音而在众多能量收集器中脱颖而出。然而，先前的研究很少探讨TEG内阻对从TEG提取最大功率的影响，并且效率的跟踪受到限制。通过分析跟踪效率与TEG内阻之间的关系，提出了一种时间指数率扰动和观测（P＆O）技术，以实现TEG宽电阻范围内的最大功率点跟踪（MPPT）。使用时间指数率 P&O，MPPT 电路通过比较正沟道金属氧化物半导体 (PMOS) 导通时间来观察功率变化，并通过指数调整负沟道金属氧化物半导体 (NMOS) 导通时间来扰动功率。 MPPT 电路采用 110 nm 互补金属氧化物半导体 (CMOS) 工艺实现。跟踪效率保持在98.9%~99.5%的较高水平。 TEG电阻的适用范围为1至12Ω，反映了至少2.2倍的增强。
The thermoelectric generator (TEG) stands out among many energy harvesters due to its simple structure, small size, rich thermal energy, and the absence of pollution and noise. However, previous studies have rarely probed into the influence of TEG internal resistances on extracting maximum power from TEGs, and the tracking of efficiency is limited. By analyzing the relationship between the tracking efficiency and the TEG internal resistances, a time exponential rate perturbation and observation (P&O) technology is proposed to achieve maximum power point tracking (MPPT) for a wide resistance range of the TEG. Using the time exponential rate P&O, the MPPT circuit observed the power change by comparing the positive-channel metal-oxide semiconductor (PMOS) on-time and perturbs the power by adjusting the negative-channel metal-oxide semiconductor (NMOS) on-time exponentially. The MPPT circuit was implemented in a 110 nm complementary metal-oxide semiconductor (CMOS) process. The tracking efficiency maintained a high level from 98.9 to 99.5%. The applicable range of the TEG resistance was from 1 to 12 Ω, which reflects an enhancement of at least 2.2 times.
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影响因子：
--
作者：
Fares M’zoughi;I. Garrido;A. Garrido;M. de La Sen
通讯作者：
Fares M’zoughi;I. Garrido;A. Garrido;M. de La Sen
影响因子：
2
作者：
구태곤;김용석;오용수;위성권;이성호
通讯作者：
구태곤;김용석;오용수;위성권;이성호
影响因子：
5.4
作者：
Shrivastava, Aatmesh;Roberts, Nathan E.;Calhoun, Benton H.
通讯作者：
Calhoun, Benton H.
影响因子：
3.9
作者：
Said, Omar;Albagory, Yasser;Al Raddady, Fahad
通讯作者：
Al Raddady, Fahad
影响因子：
--
作者：
Pantoli
通讯作者：
Pantoli