Fabrication and characterization of CrNbSiTiZr high-entropy alloy films by radio-frequency magnetron sputtering via tuning substrate bias
Fabrication and characterization of CrNbSiTiZr high-entropy alloy films by radio-frequency magnetron sputtering via tuning substrate bias
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通过调节衬底偏压射频磁控溅射 CrNbSiTiZr 高熵合金薄膜的制备和表征
DOI：
10.1016/j.surfcoat.2021.127074
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发表时间：
2021-03
影响因子：
5.4
通讯作者：
Huang Weijiu
中科院分区：
文献类型：
--
作者：
Yu Xu;Wang Junjun;Wang Linqing;Huang Weijiu
采用射频磁控溅射法在304不锈钢和Si基片上制备了CrNbSiTiZr高熵合金薄膜。研究了复合材料的显微组织、力学性能、摩擦学性能和耐腐蚀性能。结果表明，所制备的薄膜均为非晶相。随着衬底偏压的增加，由于再溅射效应和薄膜的致密化，柱状结构变得无特征。在-50 V偏压下沉积的薄膜具有较高的残余压应力（-0.82 ± 0.04 GPa）和硬度（12.4 ± 0.3 GPa）。在低负偏压（0、-50和-100 V）下，薄膜的磨损机制为粘着磨损和轻微磨粒磨损，在高负偏压（-150和-200 V）下，薄膜的磨损机制为磨粒磨损。极化曲线和电化学阻抗谱测试结果表明，在3.5wt%NaCl溶液中，三种膜均具有比304不锈钢更好的电化学耐蚀性，表明该膜能有效地保护基体免受腐蚀。在-50 V偏压下沉积的薄膜的Ecorr、icorr和Rpo值分别为− 283 mV、0.0178 μ A/cm 2和2.084 × 106 Ω·cm 2。
CrNbSiTiZr high-entropy alloy films with different substrate bias voltages (from 0 V to–200 V) were fabricated on 304 stainless steel and Si substrates by radio-frequency magnetron sputtering. The microstructure, mechanical properties, tribological performance, and corrosion resistance were investigated in detail. Results show that all the as-fabricated films exhibit an amorphous phase. The columnar structure becomes featureless with the increase substrate bias due to re-sputtering effects and densification of the film. The film deposited at the bias of –50 V has a high residual compressive stress of –0.82 ± 0.04 GPa and a high hardness of 12.4 ± 0.3 GPa. The wear mechanism of the film is adhesive and slightly abrasive at low negative bias (0, –50, and –100 V), and that at high negative bias (–150 and –200 V) is abrasive. Polarization and electrochemical impedance spectrum measurements reveal that all films have a superior electrochemical corrosion resistance to the 304 stainless steel in 3.5 wt% NaCl solution, which indicates that the film can effectively protect substrate from corrosion. The values of Ecorr, icorr, and Rpoof the film deposited at the bias of –50 V are −283 mV, 0.0178 μA/cm2, and 2.084 × 106Ω‧cm2, respectively.
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影响因子：
3.9
作者：
STERN, M;GEARY, AL
通讯作者：
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影响因子：
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作者：
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