Aluminum-Scandium: A Material for Semiconductor Packaging
Aluminum-Scandium: A Material for Semiconductor Packaging
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铝钪：半导体封装材料
DOI：
10.1007/s11664-016-4756-2
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发表时间：
2016
影响因子：
2.1
通讯作者：
Klaus-Dieter Lang
中科院分区：
文献类型：
--
作者：
Ute Geissler;Sven Thomas;Martin Schneider-Ramelow;Biswajit Mukopadhi;Klaus-Dieter Lang
一种著名的铝-钪(Al-Sc)合金，已经用于轻型运动器材，即将用于电子封装。Al-Sc合金的一个应用是制造键合焊线。这种合金的特殊之处在于它能通过沉淀变硬。这种新型键合导线的导电性类似于纯铝丝，可以在普通引线键合机上进行铝楔形/楔形(w/w)键合。焊丝具有非常细晶的显微组织。细小的Al3Sc颗粒是其高强度的主要原因，并在更高的温度(>；150°C)下防止再结晶和晶粒长大。引线键合工艺后，界面闭合良好。通过有源功率循环的可靠性研究表明，与纯铝粗导线相比，寿命大大提高。在此基础上，将Al-Sc合金溅射沉积到硅片上，作为铜(铜)球/楔键合技术中的芯片金属化试验。沉积后的膜层具有细小的柱状结构和尺寸为几个纳米的细小的共格Al3Sc颗粒。这些颗粒抑制了细丝键合过程中的铝飞溅等软化过程，并将铜球下的残余铝厚度增加到初始厚度的85%。
A well-known aluminum-scandium (Al-Sc) alloy, already used in lightweight sports equipment, is about to be established for use in electronic packaging. One application for Al-Sc alloy is manufacture of bonding wires. The special feature of the alloy is its ability to harden by precipitation. The new bonding wires with electrical conductivity similar to pure Al wires can be processed on common wire bonders for aluminum wedge/wedge (w/w) bonding. The wires exhibit very fine-grained microstructure. Small Al3Sc particles are the main reason for its high strength and prevent recrystallization and grain growth at higher temperatures (>150°C). After the wire-bonding process, the interface is well closed. Reliability investigations by active power cycling demonstrated considerably improved lifetime compared with pure Al heavy wires. Furthermore, the Al-Sc alloy was sputter-deposited onto silicon wafer to test it as chip metallization in copper (Cu) ball/wedge bonding technology. After deposition, the layers exhibited fine-grained columnar structure and small coherent Al3Sc particles with dimensions of a few nanometers. These particles inhibit softening processes such as Al splashing in fine wire bonding processes and increase the thickness of remnant Al under the copper balls to 85% of the initial thickness.
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DOI：
10.1109/estc.2008.4684554
发表时间：
2008
期刊：
2008 2nd Electronics System-Integration Technology Conference
影响因子：
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作者：
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DOI：
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发表时间：
1991
期刊：
International Electron Devices Meeting 1991 [Technical Digest]
影响因子：
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作者：
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通讯作者：
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影响因子：
1.5
作者：
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DOI：
10.1016/j.msea.2006.09.164
发表时间：
2008
影响因子：
6.4
作者：
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通讯作者：
O. Reiso