Electrical engineering of the optical properties in silicene
Electrical engineering of the optical properties in silicene
复制标题
硅烯光学特性的电气工程
DOI：
10.1007/s00339-014-8837-x
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发表时间：
2015-02
期刊：
影响因子：
--
通讯作者：
Heping Zhao
中科院分区：
文献类型：
--
作者：
Hairui Bao;Junji Guo;Wenhu Liao;Heping Zhao
基于半导体的子带间跃迁定理，我们从理论上研究了圆偏振太赫兹电磁场照射下三端硅烯基器件的光学性质。系统自旋轨道耦合电子结构可以通过背栅电压的交错亚晶格电势分别设计为拓扑绝缘（TI）和带绝缘（BI）状态。已经证明，随着亚晶格势的增加，TI自旋向上和自旋向下子带的介电函数和光学吸收光谱分别表现出红移和蓝移，而来自BI自旋向上和自旋向下子带的介电函数和光学吸收光谱已被证明随着交错亚晶格势持续蓝移。这些新颖的特征可能有助于基于硅烯的自旋电子和光电器件的设计。
Based on the intersubband transition theorem of the semiconductors, we have theoretically investigated the optical properties of a three-terminal silicene-based device under the irradiation of a circularly polarized terahertz electromagnetic field. The system spin–orbit-coupled electronic structure may be engineered to topological insulated (TI) and band insulated (BI) state, respectively, by the staggered sublattice potential from the back-gate voltage. It has been demonstrated that the dielectric functions and optical absorption spectra from the TI spin-up and spin-down subbands behave redshift and blueshift, respectively, with the increase in the sublattice potential, while those from the BI spin-up and spin-down subbands have been proven to be continually blue-shifted with the staggered sublattice potential. The novel features may be useful in the design of the spintronic and optoelectronic devices based on silicene.
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