Growth and characterization of In0.17Al0.83N thin films on lattice-matched GaN by molecular beam epitaxy
Growth and characterization of In0.17Al0.83N thin films on lattice-matched GaN by molecular beam epitaxy
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分子束外延晶格匹配 GaN 上 In0.17Al0.83N 薄膜的生长和表征
DOI：
10.1016/j.mssp.2014.08.014
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发表时间：
2014-11
影响因子：
4.1
通讯作者：
Liu, Chang
中科院分区：
文献类型：
--
作者：
Wang, Wei;Wang, Ti;Wu, Hao;Liu, Chang
采用等离子体辅助分子束外延技术在GaN模板上生长InxAl1−xN薄膜。研究了生长温度对InxAl 1 −xN薄膜质量和表面形貌的影响。采用高分辨X射线衍射、扫描电子显微镜和原子力显微镜对合金成分、结晶质量和表面形貌进行了表征。高质量In0.17Al0.83N的生长温度非常窄，在520和530 °C之间。在525 °C左右的最佳生长温度下，在晶格匹配的GaN模板上生长出了具有优良结晶质量的In0.17Al0.83N薄膜。In0.17Al0.83N（0002）峰的半高宽为249.6弧秒，是迄今为止报道的最好结果之一。In0.17Al0.83N薄膜的均方根表面粗糙度低至0.47 nm。
InxAl1−xN thin films were grown onc-plane GaN templates by plasma-assisted molecular beam epitaxy. The effect of the growth temperature on the quality and surface morphology of these InxAl1−xN thin films were examined. The alloy composition, crystalline quality and surface morphology were characterized by high-resolution x-ray diffraction, scanning electron microscopy, and atomic force microscopy. A very narrow growth temperature for high-quality In0.17Al0.83N was identified between 520 and 530 °C. At the optimized growth temperature around 525 °C, the In0.17Al0.83N thin films on lattice-matched GaN templates were grown with excellent crystalline quality. The value of full width at half maximum of the In0.17Al0.83N (0002) peak is 249.6 arcsec, which is among the best results reported to date. The root mean square surface roughness of the In0.17Al0.83N thin films is as low as 0.47 nm.
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