Prototyping of an HV-CMOS demonstrator for the High Luminosity-LHC upgrade
Prototyping of an HV-CMOS demonstrator for the High Luminosity-LHC upgrade
复制标题
用于高亮度 LHC 升级的 HV-CMOS 演示器原型设计
DOI：
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
J. Vossebeld
中科院分区：
文献类型：
--
作者：
E. Vilella;M. Benoit;R. Casanova;G. Casse;D. Ferrere;G. Iacobucci;I. Perić;J. Vossebeld
HV-CMOS 传感器可以在高能物理实验中的大面积跟踪系统的材料预算、粒度和成本方面提供重要优势。本文介绍了高亮度 LHC 的 HV-CMOS 像素演示器的设计和模拟结果。该像素演示器采用艾迈斯半导体公司的 0.35 μm HV-CMOS 工艺设计，并通过工程运行提交制造。为了提高传感器的响应，使用具有中等到高衬底电阻率的不同晶圆来制造设计。该原型由四个具有多种像素风格的大型模拟和独立矩阵组成，它们都兼容 FE-I4 ASIC 的读出。本文提供了有关矩阵和像素风格的详细信息。
HV-CMOS sensors can offer important advantages in terms of material budget, granularity and cost for large area tracking systems in high energy physics experiments. This article presents the design and simulated results of an HV-CMOS pixel demonstrator for the High Luminosity-LHC. The pixel demonstrator has been designed in the 0.35 μm HV-CMOS process from ams AG and submitted for fabrication through an engineering run. To improve the response of the sensor, different wafers with moderate to high substrate resistivities are used to fabricate the design. The prototype consists of four large analog and standalone matrices with several pixel flavours, which are all compatible for readout with the FE-I4 ASIC. Details about the matrices and the pixel flavours are provided in this article.
DOI：
10.1016/j.nima.2014.06.035
发表时间：
2014-11
影响因子：
1.4
作者：
I. Perić;C. Kreidl;P. Fischer;F. Bompard;P. Breugnon;J. Clémens;D. Fougeron;J. Liu;P. Pangaud;A. Rozanov;M. Barbero;S. Feigl;M. Capeans;D. Ferrere;H. Pernegger;B. Ristic;D. Muenstermann;S. Sevilla;A. Rosa;A. Miucci;M. Nessi;G. Iacobucci;M. Backhaus;F. Hügging;H. Krüger;T. Hemperek;T. Obermann;N. Wermes;M. Garcia-Sciveres;A. Quadt;J. Weingarten;M. George;J. Grosse-Knetter;J. Rieger;R. Bates;A. Blue;C. Buttar;D. Hynds
通讯作者：
I. Perić;C. Kreidl;P. Fischer;F. Bompard;P. Breugnon;J. Clémens;D. Fougeron;J. Liu;P. Pangaud;A. Rozanov;M. Barbero;S. Feigl;M. Capeans;D. Ferrere;H. Pernegger;B. Ristic;D. Muenstermann;S. Sevilla;A. Rosa;A. Miucci;M. Nessi;G. Iacobucci;M. Backhaus;F. Hügging;H. Krüger;T. Hemperek;T. Obermann;N. Wermes;M. Garcia-Sciveres;A. Quadt;J. Weingarten;M. George;J. Grosse-Knetter;J. Rieger;R. Bates;A. Blue;C. Buttar;D. Hynds
用于 ATLAS、CLIC 和 Mu3e 实验的商用 CMOS 技术中的高压像素探测器
DOI：
10.1016/j.nima.2013.05.006
发表时间：
2013
影响因子：
1.4
作者：
I. Perić
通讯作者：
I. Perić