Studies on the structural and electrical properties of F-doped SnO2 film prepared by APCVD
Studies on the structural and electrical properties of F-doped SnO2 film prepared by APCVD
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APCVD制备氟掺杂SnO2薄膜的结构和电学性能研究
DOI：
10.1016/j.apsusc.2011.07.025
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发表时间：
2011-10
影响因子：
6.7
通讯作者：
Zhao, Hongli
中科院分区：
文献类型：
--
作者：
Yang, Jingkai;Liu, Wenchang;Dong, Lizhong;Li, Yuanxun;Li, Chuan;Zhao, Hongli
采用常压化学气相沉积法（APCVD）在Na Ca Si玻璃上沉积了掺氟氧化锡（SnO{sub 2}：F，FTO）薄膜，并在薄膜表面镀上了一层SiO{sub x}C{sub y}扩散阻挡层。700 ℃后热时间的影响。研究了C对SnO{sub 2}：F薄膜结构和电学性能的影响。结果表明，SnO{sub 2}：F薄膜为多晶结构，具有四方SnO {sub 2}结构，薄膜中存在SnO相，并观察到异常晶粒生长。用X射线光电子能谱（XPS）测量了膜层深度的元素分布，发现当加热时间从202 s增加到262 s时，膜层表面的氧含量从78.63%增加到83.38%。电阻率从3.13 × 10{sup-4}增加到4.73 × 10{sup-4} {Ω} cm时，后加热262 s。霍尔迁移率的限制因素是电离杂质散射而不是晶界散射。
Fluorine-doped tin oxide films (SnO{sub 2}:F, FTO) were deposited by atmosphere pressure chemical vapor deposition (APCVD) on Na-Ca-Si glass coated with a diffusion barrier layer of SiO{sub x}C{sub y}. The effects of post-heating time at 700 deg. C on the structural and electrical properties of SnO{sub 2}:F films were investigated. The results showed that SnO{sub 2}:F films were polycrystalline with tetragonal SnO{sub 2} structure, SnO phase was present in SnO{sub 2} film, and abnormal grain growth was observed. The element distribution in the film depth was measured with X-ray photoelectron spectroscopy (XPS) and revealed that when the heating time increased from 202 s to 262 s, the oxygen content in the surface increased from 78.63% to 83.38%. The resistivity increased from 3.13 x 10{sup -4} for as-deposited films to 4.73 x 10{sup -4} {Omega} cm when post-heated for 262 s. Hall mobility is limited by the ionized impurity scattering rather than the grain boundary scattering.
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影响因子：
2.1
作者：
D. W. Sheel;H. M. Yates;P. Evans;U. Dagkaldiran;A. Gordijn;F. Finger;Z. Remeš;M. Vaněček
通讯作者：
D. W. Sheel;H. M. Yates;P. Evans;U. Dagkaldiran;A. Gordijn;F. Finger;Z. Remeš;M. Vaněček
DOI：
10.1016/j.mseb.2008.10.037
发表时间：
2009-03
影响因子：
3.6
作者：
U. Dagkaldiran;A. Gordijn;F. Finger;H. M. Yates;P. Evans;D. W. Sheel;Z. Remeš;M. Vaněček
通讯作者：
U. Dagkaldiran;A. Gordijn;F. Finger;H. M. Yates;P. Evans;D. W. Sheel;Z. Remeš;M. Vaněček
影响因子：
2.5
作者：
A. Banerjee;S. Kundoo;P. Sáha;K. Chattopadhyay
通讯作者：
A. Banerjee;S. Kundoo;P. Sáha;K. Chattopadhyay
影响因子：
2.1
作者：
Lee, Seung-Yup;Park, Byung-Ok
通讯作者：
Park, Byung-Ok
影响因子：
4.5
作者：
C. Agashe;S. Major
通讯作者：
C. Agashe;S. Major