Band alignment of two-dimensional lateral heterostructures
Band alignment of two-dimensional lateral heterostructures
复制标题
二维横向异质结构的能带排列
DOI：
10.1088/2053-1583/aa50cc
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发表时间：
2016-03
期刊：
影响因子：
5.5
通讯作者：
Zhang Shengbai
中科院分区：
文献类型：
--
作者：
Zhang Junfeng;Xie Weiyu;Zhao Jijun;Zhang Shengbai
Recent experimental synthesis of two-dimensional (2D) heterostructures opens a door to new opportunities in tailoring the electronic properties for novel 2D devices. Here, we show that a wide range of lateral 2D heterostructures could have a prominent advantage over the traditional three-dimensional (3D) heterostructures, because their band alignments are insensitive to the interfacial conditions. They should be at the Schottky–Mott limits for semiconductor–metal junctions and at the Anderson limits for semiconductor junctions, respectively. This fundamental difference from the 3D heterostructures is rooted in the fact that, in the asymptotic limit of large distance, the effect of the interfacial dipole vanishes for 2D systems. Due to the slow decay of the dipole field and the dependence on the vacuum thickness, however, studies based on first-principles calculations often failed to reach such a conclusion. Taking graphene/hexagonal-BN and MoS2/WS2 lateral heterostructures as the respective prototypes, we show that the converged junction width can be order of magnitude longer than that for 3D junctions. The present results provide vital guidance to high-quality transport devices wherever a lateral 2D heterostructure is involved.
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影响因子：
56.9
作者：
Liesbeth C. Venema;J. W. G. Wildoer;J. Janssen;S. Tans;H.L.J.T. Tuinstra;L. Kouwenhoven;Cees Dekker
通讯作者：
Liesbeth C. Venema;J. W. G. Wildoer;J. Janssen;S. Tans;H.L.J.T. Tuinstra;L. Kouwenhoven;Cees Dekker
DOI：
10.1038/s43586-022-00151-5
发表时间：
2014-03
期刊：
Nature Reviews Methods Primers
影响因子：
--
作者：
R. Gorbachev
通讯作者：
R. Gorbachev
影响因子：
8.6
作者：
M. Schilfgaarde;N. Newman
通讯作者：
M. Schilfgaarde;N. Newman
DOI：
10.1103/physrevb.41.10058
发表时间：
1990-05
期刊：
Physical review. B, Condensed matter
影响因子：
--
作者：
Zhang;Cohen;Louie;Tománek;Hybertsen
通讯作者：
Zhang;Cohen;Louie;Tománek;Hybertsen
影响因子：
3.7
作者：
J. Palacios;P. Tarakeshwar;D. Kim
通讯作者：
J. Palacios;P. Tarakeshwar;D. Kim