A Semiphysical Large-Signal Compact Carbon Nanotube FET Model for Analog RF Applications
A Semiphysical Large-Signal Compact Carbon Nanotube FET Model for Analog RF Applications
复制标题
用于模拟 RF 应用的半物理大信号紧凑型碳纳米管 FET 模型
DOI：
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发表时间：
2015
影响因子：
3.1
通讯作者：
M. Claus
中科院分区：
文献类型：
--
作者：
M. Schroter;M. Haferlach;A. Pacheco;S. Mothes;P. Sakalas;M. Claus
提出了一种紧凑的大信号模型，称为紧凑碳纳米管模型 (CCAM)，它准确地描述了制造的碳纳米管 FET (CNTFET) 的直流形状和小信号特性。新模型由计算高效且平滑的电流和电荷公式组成。对于给定的栅极长度，该模型允许从单指单管晶体管到多指多管晶体管的几何尺寸缩放。还包括双极输运、自加热的温度依赖性、噪声和简单的陷阱模型。新模型与玻尔兹曼输运方程和肖特基势垒 CNTFET 测量数据非常吻合，并已在 Verilog-A 中实现，使其在电路模拟器中广泛使用。
A compact large-signal model, called Compact Carbon Nanotube Model (CCAM), is presented that accurately describes the shape of DC and small-signal characteristics of fabricated carbon nano-tube FETs (CNTFETs). The new model consists of computationally efficient and smooth current and charge formulations. The model allows, for a given gate length, geometry scaling from single-finger single-tube to multifinger multitube transistors. Ambipolar transport, temperature dependence with self-heating, noise, and a simple trap model have also been included. The new model shows excellent agreement with the data from both the Boltzmann transport equation and measurements of Schottky-barrier CNTFETs and has been implemented in Verilog-A, making it widely available across circuit simulators.
肖特基势垒 CNTFET 的线性化
影响因子：
2.4
作者：
S. Mothes;M. Claus;M. Schroter
通讯作者：
M. Schroter
影响因子：
2.3
作者：
Schroeter, Michael;Claus, Martin;Wang, Dawei
通讯作者：
Wang, Dawei