A Novel Bonding Method for Ionic Wafers
A Novel Bonding Method for Ionic Wafers
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离子晶圆的新型键合方法
DOI：
10.1109/tadvp.2007.906394
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发表时间：
2007
影响因子：
--
通讯作者：
M. Kim
中科院分区：
文献类型：
--
作者：
M. Howlader;T. Suga;M. Kim
描述了一种利用改进的表面活化键合(SAB)方法将蓝宝石、石英和玻璃晶片与硅键合的新方法。在该方法中，使用低能量的Ar离子束清洁配合表面并同时在其表面涂覆纳米附着力铁层。光学图像显示，LiNbO_3/Si的4-In晶片的整个区域是键合的。其他样品的这类图像显示了界面上粒子诱导的空洞。所有配对对的平均抗拉强度都远高于10兆帕。长时间的照射降低了蓝宝石、石英和铝硅酸盐玻璃的偏振。Fe和Ar离子诱导的电荷沉积导致了电场的形成，电场是引起退极化的原因。在LiNbO_3/Si中发现晶格失配引起的局域应变。铝硅酸盐玻璃/硅界面没有观察到这种应变，可能是由于300℃8h的热处理，铝硅酸盐玻璃/硅界面出现了2 nm厚的界面层。在/Si界面上观察到一层厚度为5 nm的非晶层，另一层横跨/Si界面。EELS谱证实了界面上存在纳米粘附性铁层。这些铁层与长时间的离子束辐照产生的电场有关，特别是在LiNbO_3/Si中，这可能是导致硅/离子晶片在低温下具有较高的结合强度的原因。
A novel method for bonding sapphire, quartz, and glass wafers with silicon using the modified surface activated bonding (SAB) method is described. In this method, the mating surfaces were cleaned and simultaneously coated with nano-adhesion Fe layers using a low energy argon ion beam. The optical images show that the entire area of the 4-in wafers of LiNbO3/Si was bonded. Such images for other samples show particle induced voids across the interface. The average tensile strength for all of the mating pairs was much higher than 10 MPa. Prolonged irradiation reduced polarization in sapphire, quartz, and Al-silicate glasses. Fe and Ar ion-induced charge deposition result in the formation of an electric field, which was responsible for the depolarization. The lattice mismatch induced local strain was found in LiNbO3/Si. No such strain was observed in the Al-silicate glass/Si interface probably because of annealing at 300 for 8 h. The Al-silicate glass/Si interface showed an interfacial layer of 2 nm thick. A 5-nm-thick amorphous layer was observed with the other layer across the /Si interface. The EELS spectra confirmed the presence of nano-adhesion Fe layers across the interface. These Fe layers associated with the electric field induced by ion beam irradiation for prolonged period of time, particularly in LiNbO3/Si, might be responsible for the high bonding strength between Si/ionic wafers at low temperatures.
影响因子：
--
作者：
Howlader, M. M. R.;Suehara, S.;Suga, T.
通讯作者：
Suga, T.
影响因子：
3.9
作者：
Howlader, MMR;Okada, H;Suga, T
通讯作者：
Suga, T