A Stochastic Leaky-Integrate-and-Fire Neuron Model With Floating Gate-Based Technology for Fast and Accurate Population Coding
A Stochastic Leaky-Integrate-and-Fire Neuron Model With Floating Gate-Based Technology for Fast and Accurate Population Coding
复制标题
采用基于浮栅技术的随机泄漏积分激发神经元模型,可实现快速准确的群体编码
DOI:
10.1109/jeds.2022.3206317
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发表时间:
2022
影响因子:
2.3
通讯作者:
Chihiro Matsui and Ken Takeuchi
中科院分区:
文献类型:
--
作者:
Akira Goda;Chihiro Matsui and Ken Takeuchi
An analytical model has been developed for stochastic leaky-integrate-and-fire (LIF) neurons with floating gate (FG) technology. The stochastic behaviors have been modeled extensively for both individual neurons and populations of neurons. In the FG LIF neurons, the electron injection is governed by the tunneling process through the gate oxide, leading to the exponential distributions of the injection time and inter spike interval (ISI) stochasticity. The concept of the population coding is demonstrated by simulating the stochastic behaviors of the populations of the FG LIF neurons. The ISI stochasticity enables encoding of the input signals to the population outputs. Spike-to-spike stochasticity improves the signal-to-noise ratio of the population outputs. Moreover, the shape of the ISI distribution can be controlled by adjusting the number of electrons to spike (NES). Exponential-like ISI distributions are realized by reducing the NES. With the exponential-like ISI distributions, the population of fast spiking neurons increases significantly (more than 10% of neurons spiking twice faster than the mean ISI), potentially contributing to the fast computation. Finally, step-by-step procedures have been proposed to design the FG LIF neurons exhibiting the desired neuron characteristics including operation voltage (0.5 V to 3 V), leaky time constantto >10 ms), ISI mean (in the range of 6 orders of magnitude) and stochasticity ~0 % to ~60 %) as well as the type of the distribution (exponential-like to Gaussian-like).
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影响因子:
3.1
作者:
Auge, Daniel;Hille, Julian;Knoll, Alois
通讯作者:
Knoll, Alois
DOI:
--
发表时间:
2022
期刊:
影响因子:
--
作者:
Akira Goda;Chihiro Matsui and Ken Takeuchi
通讯作者:
Chihiro Matsui and Ken Takeuchi
影响因子:
3.1
作者:
Brigner, Wesley H.;Friedman, Joseph S.;Garcia-Sanchez, Felipe
通讯作者:
Garcia-Sanchez, Felipe
影响因子:
38.3
作者:
Tuma, Tomas;Pantazi, Angeliki;Eleftheriou, Evangelos
通讯作者:
Eleftheriou, Evangelos
DOI:
10.1109/iedm.2004.1419320
发表时间:
2004
期刊:
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004.
影响因子:
--
作者:
Gabriel Molas;D. Deleruyelle;B. D. Salvo;Gérard Ghibaudo;M. Gely;S. Jacob;D. Lafond;S. Deleonibus
通讯作者:
S. Deleonibus