Magnetoresistance of rolled-up Fe3Si nanomembranes

Magnetoresistance of rolled-up Fe3Si nanomembranes
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卷绕的 Fe3Si 纳米膜的磁阻

DOI:
10.1088/0957-4484/23/25/255701
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发表时间:
2012
期刊:
影响因子:
3.5
通讯作者:
O. G. Schmidt
O. G. Schmidt
中科院分区:
材料科学3区
文献类型:
--
作者:
J. Schumann;K. G. Lisunov;W. Escoffier;B. Raquet;J. M. Broto;E. Arushanov;I. Mönch;D. Makarov;C. Deneke;O. G. Schmidt

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在高达 55 T 的脉冲磁场中,在 4.2 K 至 300 K 的宽温度范围内研究了单个卷起的 Fe 3 Si 纳米膜的磁输运。观察到的磁阻 (MR) 具有以下显着特征:(i) MR 在研究的温度和磁场区间内为负;(ii) 其大小在低场区域中随磁场线性增加,并在磁场作用下呈现逐渐饱和的趋势。增加;(iii) MR 效应随着温度的升高而变得更加明显。 MR 对磁场和温度的这些依赖性与自旋翻转 s-d 相互作用的自旋无序模型的预测一致,该模型有助于磁振子的产生或湮灭,预计该模型会高于某个临界温度。卷绕和平面样品的MR特征的比较揭示了卷绕管的临界温度大幅增加,这是由于卷绕纳米膜中出现新的几何形状和内部应变,影响了材料的电子和磁性。
Magnetotransport of individual rolled-up Fe 3 Si nanomembranes is investigated in a broad temperature range from 4.2 K up to 300 K in pulsed magnetic fields up to 55 T. The observed magnetoresistance (MR) has the following pronounced features:(i) MR is negative in the investigated intervals of temperature and magnetic field;(ii) its magnitude increases linearly with the magnetic field in a low-field region and reveals a gradual trend to saturation when the magnetic field increases;(iii) the MR effect becomes more pronounced with increasing temperature. These dependences of MR on the magnetic field and temperature are in line with predictions of the spin-disorder model of the spin-flip s–d interaction assisted with creation or annihilation of magnons, which is expected above a certain critical temperature. Comparison of the MR features in rolled-up and planar samples reveals a substantial increase of the critical temperature in the rolled-up tube, which is attributed to a new geometry and internal strain arising in the rolled-up nanomembranes, influencing the electronic and magnetic properties of the material.
多功能纳米膜自组装成紧凑的卷绕传感器-执行器装置
DOI: --
发表时间: 2011
期刊:
影响因子: --
作者:
I. Mönch;J. Schumann;M. Stockmann;K. Arndt;O. Schmidt
通讯作者: O. Schmidt
Fe3Si 外延薄膜的输运和磁性能
DOI: --
发表时间: 2008
期刊:
影响因子: --
作者:
H. Vinzelberg;J. Schumann;D. Elefant;E. Arushanov;O. Schmidt
通讯作者: O. Schmidt