Growth and Transport Properties of Layered Bismuth Telluride Thin Films via Radio Frequency Magnetron Sputtering
Growth and Transport Properties of Layered Bismuth Telluride Thin Films via Radio Frequency Magnetron Sputtering
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射频磁控溅射层状碲化铋薄膜的生长和传输特性
DOI：
10.3724/sp.j.1077.2011.11030
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发表时间：
2011
影响因子：
1.7
通讯作者：
Tan Ming
中科院分区：
文献类型：
--
作者：
Zhang Zhi-Wei;Wang Yao;Deng Yuan;Tan Ming
通过射频（RF）磁控溅射制备了具有层状纳米结构的碲化铋薄膜。使用单个 Bi2Te3 靶材在不同的基板温度和持续时间下沉积薄膜。通过 X 射线衍射（XRD）、扫描电子显微镜（SEM）和能谱仪（EDS）对这些薄膜的微观结构和化学成分进行了表征。在这些薄膜上测量了电传输特性和塞贝克系数。结果表明，衬底温度是影响碲化铋薄膜微观结构和输运性能的关键因素。高温有利于层状纳米结构的形成和功率因数的提高。在400℃沉积的薄膜上获得了最高的功率因数。然而，在这些薄膜中观察到Te缺陷。因此，通过优化这些薄膜的成分，热电性能将得到进一步增强。
Bismuth telluride thin films with layered nanostructure have been fabricated by radio frequency (RF) mag- netron sputtering. Thin films were deposited at various substrate temperatures and durations with a single Bi2Te3 target. The microstructures and chemical compositions of these films were characterized by X-ray diffraction (XRD), scan- ning electron microscope (SEM) and energy dispersive spectroscope (EDS). Electrical transport property and Seebeck coefficient were measured on these thin films. The results show that substrate temperature is a key factor on the micro- structure and transport property of bismuth telluride thin films. High temperature is beneficial for the formation of lay- ered nanostructure and the enhancement of power factor. The highest power factor was obtained on the thin film de- posited at 400℃. However, Te deficiency was observed in these thin films. Thus thermoelectric property would be further enhanced by optimizing composition of these thin films.
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影响因子：
3.2
作者：
M. Takashiri;M. Takiishi;Saburo Tanaka;K. Miyazaki;H. Tsukamoto
通讯作者：
M. Takashiri;M. Takiishi;Saburo Tanaka;K. Miyazaki;H. Tsukamoto
影响因子：
1.8
作者：
Venkatasubramanian, R;Colpitts, T;ElMasry, N
通讯作者：
ElMasry, N
影响因子：
41.2
作者：
Snyder, GJ;Lim, JR;Fleurial, JP
通讯作者：
Fleurial, JP
影响因子：
3.2
作者：
Huang, Baoling;Lawrence, Chris;Kaviany, Massoud
通讯作者：
Kaviany, Massoud
影响因子：
4
作者：
J. Walachová;R. Zeipl;J. Zelinka;V. Malina;M. Pavelka;M. Jelínek;V. Studnička;P. Lošťák
通讯作者：
J. Walachová;R. Zeipl;J. Zelinka;V. Malina;M. Pavelka;M. Jelínek;V. Studnička;P. Lošťák