Broadband electroluminescence from reverse breakdown in individual suspended carbon nanotube pn-junctions
Broadband electroluminescence from reverse breakdown in individual suspended carbon nanotube pn-junctions
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单个悬浮碳纳米管 pn 结反向击穿产生的宽带电致发光
DOI：
10.1007/s12274-020-2941-3
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发表时间：
2020
期刊：
影响因子：
9.9
通讯作者：
Cronin, Stephen B.
中科院分区：
文献类型：
--
作者：
Wang, Bo;Yang, Sisi;Wang, Yu;Kim, Younghee;Ahsan, Ragib;Kapadia, Rehan;Doorn, Stephen K.;Htoon, Han;Cronin, Stephen B.
在碳纳米管（CNTs）中有各种各样的光发射机制，这些机制产生了广泛的光谱发射特性，提供了有关导致光子发射的潜在物理过程的重要信息。在这里，我们报告了在不同栅极和偏置条件下从单个悬浮碳纳米管双栅场效应晶体管（FET）器件获得的光谱。通过对栅极施加相反的电压（即Vg1= - Vg2），我们能够在碳纳米管的悬浮区域内创建一个pn结。在正向偏压条件下，光谱显示出一个峰值，对应于e11激子通过热发射（即黑体）发射，发生在约8 μ W的电功率下，对应于约0.5 MW/cm2的功率密度。另一方面，在反向偏压下观测到的光谱对应于冲击电离和雪崩发射，发生在~10 nW的电功率下，呈现出从1,600 nm到更短波长至600 nm的无特征平坦光谱。在这里，由高电场（~0.5 MV/cm）产生的热电子能够产生远高于E11（基态）能量的高能光子。有些令人惊讶的是，这些器件不像发光二极管（LED）那样，在正向偏置下通过电子和空穴湮灭而发光。讨论了可能的原因，包括俄歇复合。
There are various mechanisms of light emission in carbon nanotubes (CNTs), which give rise to a wide range of spectral emission characteristics that provide important information regarding the underlying physical processes that lead to photon emission. Here, we report spectra obtained from individual suspended CNT dual-gate field effect transistor (FET) devices under different gate and bias conditions. By applying opposite voltages to the gate electrodes (i.e.,Vg1= −Vg2), we are able to create a pn-junction within the suspended region of the CNT. Under forward bias conditions, the spectra exhibit a peak corresponding to E11exciton emission via thermal (i.e., blackbody) emission occurring at electrical powers around 8 µW, which corresponds to a power density of approximately 0.5 MW/cm2. On the other hand, the spectra observed under reverse bias correspond to impact ionization and avalanche emission, which occurs at electrical powers of ~10 nW and exhibits a featureless flat spectrum extending from 1,600 nm to shorter wavelengths up to 600 nm. Here, the hot electrons generated by the high electric fields (~0.5 MV/cm) are able to produce high energy photons far above the E11(ground state) energy. It is somewhat surprising that these devices do not exhibit light emission by the annihilation of electrons and holes under forward bias, as in a light emitting diode (LED). Possible reasons for this are discussed, including Auger recombination.
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通过悬浮碳纳米管中的雪崩和亚雪崩击穿实现超低功率发光
影响因子：
7
作者：
Bo Wang;Sisi Yang;L. Shen;S. Cronin
通讯作者：
S. Cronin
影响因子：
8.6
作者：
Adam W. Bushmaker;V. Deshpande;Scott S. Hsieh;M. Bockrath;S. Cronin
通讯作者：
Adam W. Bushmaker;V. Deshpande;Scott S. Hsieh;M. Bockrath;S. Cronin
影响因子：
8.6
作者：
Matsunaga, Ryusuke;Matsuda, Kazunari;Kanemitsu, Yoshihiko
通讯作者：
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直接观察碳纳米管中的玻恩-奥本海默近似击穿。
影响因子：
10.8
作者：
Adam W. Bushmaker;V. Deshpande;Scott S. Hsieh;M. Bockrath;S. Cronin
通讯作者：
S. Cronin
影响因子：
17.1
作者：
Liu, Zuwei;Bushmaker, Adam;Cronin, Stephen B.
通讯作者：
Cronin, Stephen B.