Ion-beam-induced thin film stress in lithium niobate

Ion-beam-induced thin film stress in lithium niobate
复制标题

铌酸锂中离子束诱导的薄膜应力

DOI:
10.1088/0022-3727/47/26/265302
复制
发表时间:
2014
期刊:
Journal of Physics D: Applied Physics
影响因子:
--
通讯作者:
W. Wesch
W. Wesch
中科院分区:
--
文献类型:
--
作者:
E. Schmidt;T. Steinbach;W. Wesch

文献摘要

参考文献

被引文献

相似文献

高能离子对晶体固体的主要改性是晶格缺陷的形成,这些缺陷随着持续的照射而积累。许多材料在较高的离子注量下表现出从晶态到非晶态的相变。然而,这种离子束诱导的结构改性涉及机械应力的形成,这通常不利于离子辐照在微器件技术中的成功应用。因此,离子束诱导的应力演化的基本理解是至关重要的有效利用离子束技术。铌酸锂(LiNbO3)是一种很有前途的集成光子晶体材料.然而,在铌酸锂中制备这种结构,离子辐照是必不可少的.为了得到一个基本的和全面的了解离子束在LiNbO3中诱导的缺陷和应力的演变,与不同的参数(离子能量和辐照温度)在很宽的范围内的离子注量不同的晶体取向进行辐照。利用卢瑟福背散射技术和激光反射技术分别研究了离子束辐照下的缺陷和应力演化。
The dominating modification of crystalline solids by energetic ions is the formation of lattice defects, which accumulate with ongoing irradiation. Many materials exhibit a phase transition from crystalline to the amorphous state at higher ion fluence. However, this ion-beam-induced structural modification involves the formation of mechanical stress, which is generally disadvantageous for the successful application of ion irradiation in the micro-device technology. Hence, a fundamental understanding of the ion-beam-induced stress evolution is crucial for the effective use of ion beam technology. Lithium niobate (LiNbO 3) is a promising candidate for the application of integrated photonic structures. However, for the fabrication of such structures in LiNbO 3 ion irradiation is indispensable. In order to get a fundamental and comprehensive understanding of the ion-beam-induced defect and stress evolution in LiNbO 3, irradiations with varying parameters (ion energy and irradiation temperature) over a wide range of ion fluence for different crystallographic orientations were performed. The ion-beam-induced defect and stress evolution were studied by means of in situ Rutherford backscattering spectrometry and laser reflection technique, respectively.
DOI: --
发表时间: 1979
期刊:
影响因子: --
作者:
R. Webb;G. Carter
通讯作者: G. Carter
DOI: --
发表时间: 1983
期刊:
影响因子: --
作者:
G. Götz;H. Karge
通讯作者: H. Karge
离子注入 III-V 族化合物在 20 至 420 K 温度下损伤产生的比较研究
DOI: --
发表时间: 1999
期刊:
影响因子: --
作者:
E. Wendler;B. Breeger;C. Schubert;W. Wesch
通讯作者: W. Wesch
DOI: --
发表时间: 2002
期刊:
影响因子: --
作者:
P. Ossi
通讯作者: P. Ossi
离子束诱导锗中的应力形成和松弛
DOI: --
发表时间: 2013
期刊:
影响因子: --
作者:
T. Steinbach;A. Reupert;E. Schmidt;W. Wesch
通讯作者: W. Wesch