Growth behavior of polycrystalline silicon thin films deposited by RTCVD on quartz substrates
Growth behavior of polycrystalline silicon thin films deposited by RTCVD on quartz substrates
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RTCVD 石英衬底上沉积多晶硅薄膜的生长行为
DOI：
10.1007/s11434-010-3036-4
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发表时间：
2010-07
影响因子：
--
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中科院分区：
文献类型：
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采用快速热化学气相沉积（RTCVD）技术在石英衬底上制备了多晶硅薄膜，并利用XRD、SEM和TEM对薄膜的结构进行了研究。XRD谱图显示出单一的强（220）衍射峰，表明多晶硅薄膜具有择优<110>取向。平面SEM图像显示多晶硅薄膜表面由大量大小不一的多角锥形晶粒组成，截面SEM图像进一步表明多晶硅薄膜为柱状晶粒，生长方向垂直于衬底表面。TEM观察结果表明，多晶硅薄膜中存在大量的孪晶，包括一级、二级和高级（~ 3级）孪晶。上述实验结果不能用常压化学气相沉积（APCVD）制备多晶硅薄膜的传统观点来解释，而可用Ino提出的面心立方金属薄膜中的多重孪晶粒子（MTPs）模型来解释。根据上述实验结果和Ino的模型，我们倾向于认为RTCVD沉积在石英衬底上的多晶硅薄膜的成核和晶粒生长是基于MTP的形成，然后这些MTP以岛状生长模式形成连续的薄膜。
Polycrystalline silicon (poly-Si) thin films were prepared on quartz substrates by rapid thermal chemical vapor deposition (RTCVD) system, and their structures were studied by XRD, SEM and TEM, respectively. XRD spectra exhibit a single strong (220) diffraction peak, which indicates that the poly-Si films are preferentially <110> oriented. Plane-view SEM images show that the surface of the poly-Si films is composed of large numbers of polygonal pyramid grains with different sizes, and cross-section SEM images further indicate that they are columnar grains with growth direction perpendicular to substrate surface. TEM observation results demonstrate that there are a lot of twin crystals including one-order, two-order and high-order (⩾3) twin crystals in the poly-Si films. The above experimental results can not be elucidated by the conventional opinion on growth behavior of poly-Si films prepared by atmosphere pressure chemical vapor deposition (APCVD), but can be explained by the Ino’s multiply twinned particles (MTPs) model found in the face centered cubic metal films. According to the above experimental results and Ino’s model, we tend to think that nucleation and grain growth of poly-Si films deposited by RTCVD on quartz substrates are based on the formation of MTPs, and then these MTPs form the continuous films in an island growth mode.
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影响因子：
2.1
作者：
A. Focsa;A. Slaoui;E. Pihan;F. Snijkers;P. Leempoel;G. Beaucarne;J. Poortmans
通讯作者：
A. Focsa;A. Slaoui;E. Pihan;F. Snijkers;P. Leempoel;G. Beaucarne;J. Poortmans
DOI：
10.1051/jp4:2001338
发表时间：
2001-08
期刊：
Journal De Physique Iv
影响因子：
--
作者：
A. Slaoui;S. Bourdais
通讯作者：
A. Slaoui;S. Bourdais
影响因子：
8.7
作者：
A. Focsa;I. Gordon;J. Auger;A. Slaoui;G. Beaucarne;J. Poortmans;C. Maurice
通讯作者：
A. Focsa;I. Gordon;J. Auger;A. Slaoui;G. Beaucarne;J. Poortmans;C. Maurice
影响因子：
1.8
作者：
K. Yagi;K. Takayanagi;Kunio Kobayashi;G. Honjo
通讯作者：
K. Yagi;K. Takayanagi;Kunio Kobayashi;G. Honjo
影响因子：
1.7
作者：
INO, S
通讯作者：
INO, S