Thermally Stable, High Performance Transfer Doping of Diamond using Transition Metal Oxides.
Thermally Stable, High Performance Transfer Doping of Diamond using Transition Metal Oxides.
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DOI：
10.1038/s41598-018-21579-4
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发表时间：
2018-02-20
影响因子：
4.6
通讯作者：
Moran DAJ
中科院分区：
文献类型：
--
作者：
Crawford KG;Qi D;McGlynn J;Ivanov TG;Shah PB;Weil J;Tallaire A;Ganin AY;Moran DAJ
我们报告了使用 MoO3 和 V2O5 表面受体层优化氢封端金刚石表面转移掺杂的环境稳定性和高温操作。研究发现，400°C 下氢化金刚石表面的原位退火对于增强长期掺杂稳定性至关重要。进行高达 300°C 的高温薄层电阻测量，以检查掺杂热稳定性。 MoO3 和 V2O5 转移掺杂氢封端金刚石样品暴露在环境空气中高达 300°C 的温度下，显示出表面电导率的显着且不可逆的损失。然而，当在真空或环境空气中进行类似的热处理并且用氢倍半硅氧烷（HSQ）保护层封装氧化物层时，发现热稳定性显着提高。通过 X 射线衍射检查薄膜发现，与看起来保持非晶态的 V2O5 薄膜相比，在环境空气中进行热处理后，MoO3 层的结晶程度更高。这些结果表明，将这些氧化物材料作为氢封端金刚石上的表面受体层进行适当的封装和钝化对于最大限度地提高其环境和热稳定性至关重要。
We report on optimisation of the environmental stability and high temperature operation of surface transfer doping in hydrogen-terminated diamond using MoO3 and V2O5 surface acceptor layers. In-situ annealing of the hydrogenated diamond surface at 400 °C was found to be crucial to enhance long-term doping stability. High temperature sheet resistance measurements up to 300 °C were performed to examine doping thermal stability. Exposure of MoO3 and V2O5 transfer-doped hydrogen-terminated diamond samples up to a temperature of 300 °C in ambient air showed significant and irreversible loss in surface conductivity. Thermal stability was found to improve dramatically however when similar thermal treatment was performed in vacuum or in ambient air when the oxide layers were encapsulated with a protective layer of hydrogen silsesquioxane (HSQ). Inspection of the films by X-ray diffraction revealed greater crystallisation of the MoO3 layers following thermal treatment in ambient air compared to the V2O5 films which appeared to remain amorphous. These results suggest that proper encapsulation and passivation of these oxide materials as surface acceptor layers on hydrogen-terminated diamond is essential to maximise their environmental and thermal stability.
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影响因子：
4.1
作者：
Kasu, M.;Ueda, K.;Makimoto, T.
通讯作者：
Makimoto, T.
ZnO发光器件，寿命6.8小时
影响因子：
4
作者：
Liu, J. S.;Shan, C. X.;Shen, D. Z.
通讯作者：
Shen, D. Z.
影响因子：
3.2
作者：
Verona, C.;Ciccognani, W.;Verona-Rinati, G.
通讯作者：
Verona-Rinati, G.
影响因子：
4.1
作者：
Strobel, P.;Ristein, J.;Boltalina, O.
通讯作者：
Boltalina, O.
影响因子：
5.4
作者：
Tordjman, Moshe;Saguy, Cecile;Kalish, Rafi
通讯作者：
Kalish, Rafi