Promising Approach for Rapid Growth of High-Quality SiC Crystals Using Si–Nd–C Solutions
Promising Approach for Rapid Growth of High-Quality SiC Crystals Using Si–Nd–C Solutions
复制标题
使用 Si-Nd-C 溶液快速生长高质量 SiC 晶体的有前途的方法
DOI：
10.1021/acs.cgd.3c00409
复制
发表时间：
2023
期刊：
影响因子：
--
通讯作者：
Yun Lei
中科院分区：
文献类型：
--
作者：
Peng Li;Minpeng Lei;Wenhui Ma;Chao Guo;F. Mu;Yun Lei
溶液法是一种很有前途的高质量碳化硅（SiC）晶体生长技术。然而，提高C在生长溶液中的溶解度是SiC晶体快速生长的关键问题。在本研究中，将Nd添加到Si-C溶液中，以提高C的溶解度，并在低温（1823-1923 K）下快速生长高质量的SiC晶体。首先，高温化学平衡被用来研究在Si-Nd-C溶液中的C溶解度的温度依赖性。与相同温度下的常规Si-Cr-C、Si-Fe-C和Si-Ti-C熔体相比，C在Si-Nd-C熔体中的溶解度最高。在1823和1923 K下，用于SiC晶体溶液生长的初始Si-Nd合金被确定为Si-（25-42 mol %）Nd。之后，使用温差法，在1923 K下以36 K的温差从Si-35摩尔% Nd、Si-35摩尔% Cr、Si-35摩尔% Ti和Si-35摩尔% Fe溶液中生长SiC晶体。产生最大数量和尺寸的沉淀SiC晶体的溶液按降序为Si-35 mol % Nd溶液> Si-35 mol % Cr溶液> Si-35 mol % Fe溶液> Si-35 mol % Ti溶液（无SiC晶体）。通过对过饱和度（ΔC）和过饱和度（σ）的分析和比较，认为Si-Nd-C溶液在低温快速生长高质量SiC晶体方面具有很好的应用前景。
The solution growth method is a promising technology for growing high-quality silicon carbide (SiC) crystals. However, enhancing C solubility in the growth solution is a key issue in the rapid growth of SiC crystals. In this study, Nd was added to a Si–C solution to enhance the solubility of C and rapidly grow high-quality SiC crystals at low temperatures (1823–1923 K). First, high-temperature chemical equilibrium was used to investigate the temperature dependence of the C solubility in a Si–Nd–C solution. The solubility of C in the Si–Nd–C melt was the highest, compared to those of the conventional Si–Cr–C, Si–Fe–C, and Si–Ti–C melts at the same temperature. The initial Si–Nd alloys used for the solution growth of SiC crystals were determined as Si-(25–42 mol %) Nd at 1823 and 1923 K. Thereafter, a temperature difference method was used to grow SiC crystals from Si-35 mol % Nd, Si-35 mol % Cr, Si-35 mol % Ti, and Si-35 mol % Fe solutions at 1923 K with a temperature difference of 36 K. The solutions producing the largest quantity and size of precipitated SiC crystals in the descending order were Si-35 mol % Nd solution > Si-35 mol % Cr solution > Si-35 mol % Fe solution > Si-35 mol % Ti solution (no SiC crystals). After analyzing and comparing the values for the supersaturation (ΔC) and degree of supersaturation (σ), Si–Nd–C solutions show great promise for use in the rapid growth of high-quality SiC crystals at low temperatures.
影响因子：
2.3
作者：
Yuji Yamamoto;S. Harada;Kazuaki Seki;Atsushi Horio;T. Mitsuhashi;Daiki Koike;M. Tagawa;T. Ujihara
通讯作者：
Yuji Yamamoto;S. Harada;Kazuaki Seki;Atsushi Horio;T. Mitsuhashi;Daiki Koike;M. Tagawa;T. Ujihara
高温气源法高生长速率的 4H-SiC 块晶中位错密度的降低
影响因子：
2.3
作者：
Hoshino Norihiro;Kamata Isaho;Kanda Takahiro;Tokuda Yuichiro;Kuno Hironari;Tsuchida Hidekazu
通讯作者：
Tsuchida Hidekazu