Fluorinated nanoporous SiO2 films with ultra-low dielectric constant
Fluorinated nanoporous SiO2 films with ultra-low dielectric constant
复制标题
超低介电常数氟化纳米孔SiO2薄膜
DOI：
10.1016/j.jnoncrysol.2008.05.032
复制
发表时间：
2008-08
影响因子：
3.5
通讯作者：
D.L. Hou
中科院分区：
文献类型：
--
作者：
C.M. Zhen;J.J. Zhang;Y.J. Zhang;C.X. Liu;C.F. Pan;D.L. Hou
采用溶胶-凝胶法和旋涂技术制备了低介电常数的含氟纳米多孔二氧化硅（记为SiO2：F）薄膜。SiO2：F薄膜的漏电流密度分别为10− 8和3×10−6A/cm 2，对于沉积态薄膜和在450°C下退火的薄膜。这些电流比普通SiO2薄膜的电流低一个数量级以上。光致发光的结果表明，强的蓝光发射和小的蓝移的SiO2：F薄膜的孔隙率的增加有关。的介电性能也进行了表征和退火的SiO2：F膜的k值被发现是约1.67。退火后的SiO2：F薄膜中的孔洞尺寸较小，且尺寸分布均匀。本文对这一现象的机理进行了讨论。
Fluorinated nanoporous silica (denoted as SiO2:F) thin films with low dielectric constant were prepared by a sol–gel method and spin coating technique. The leakage current densities of the SiO2:F thin films were 10−8and 3×10−6A/cm2respectively for the as-deposited films and for those subjected to annealing at a temperature of 450°C. These currents are more than one order of magnitude lower than those of the common SiO2films. Photoluminescent results showed strong blue-light emission and a small blue shift in the SiO2:F films that were related to the increment of the porosity. The dielectric properties were also characterized and the k value of the annealed SiO2:F film was found to be about 1.67. The hole size in the films is small and the size distribution is uniform for the annealed SiO2:F samples due to the effects of fluorination. The underlying mechanism for fluorination is discussed in this paper.
登录
查看更多内容
影响因子：
--
作者：
T. Turner
通讯作者：
T. Turner
DOI：
10.4028/www.scientific.net/msf.475-479.1733
发表时间：
2005-01
期刊：
Materials Science Forum
影响因子：
--
作者：
Z.W. He;X. Liu;D.Y. Xu;Qiang Su;D. Guo;Y.Y. Wang
通讯作者：
Z.W. He;X. Liu;D.Y. Xu;Qiang Su;D. Guo;Y.Y. Wang
影响因子：
2.1
作者：
Suzhu Yu;T. Wong;Xiao Hu;T. K. Goh
通讯作者：
Suzhu Yu;T. Wong;Xiao Hu;T. K. Goh
影响因子：
2.1
作者：
H. Treichel
通讯作者：
H. Treichel
DOI：
10.1016/j.mseb.2005.11.034
发表时间：
2006-03
影响因子：
3.6
作者：
Z. He;X. Liu;J. Gou;Yinyue Wang
通讯作者：
Z. He;X. Liu;J. Gou;Yinyue Wang