A study of the dynamic properties of photo-induced charge carriers at nanoporous TiO2/conductive substrate interfaces by the transient photovoltage technique
A study of the dynamic properties of photo-induced charge carriers at nanoporous TiO2/conductive substrate interfaces by the transient photovoltage technique
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利用瞬态光电压技术研究纳米多孔 TiO2/导电基底界面光生载流子的动态特性
DOI：
10.1088/0957-4484/19/27/275707
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发表时间：
2008-07
期刊：
影响因子：
3.5
通讯作者：
Wang, Dejun
中科院分区：
文献类型：
--
作者：
Wei, Xiao;Xie, Tengfeng;Pang, Shan;Xu, Dan;Zhao, Qidong;Wang, Dejun
构建了内建电场方向相反的两个界面：纳米多孔TiO 2薄膜/ FTO电极和纳米多孔TiO 2薄膜/半透明Pt衬底。利用瞬态光电压技术研究了两种纳米多孔TiO 2/导电基底体系中光生载流子的分离和输运。当激光束从纳米多孔TiO 2膜的表面（顶部照明）或TiO 2/衬底界面（底部照明）入射时，获得各种瞬态光电压响应。顶部照明和底部照明，分别观察到的光电压振幅的线性和对数的依赖关系的激发水平。结果表明，扩散是纳米多孔TiO 2薄膜中载流子分离的主要方式，过量载流子在TiO 2/衬底界面的内建电场作用下通过漂移分离。
Two interfaces with opposite orientations of the built-in electric field, nanoporous TiO2 film/ FTO electrode and nanoporous TiO2 film/semitransparent Pt substrate, were constructed. The separation and transport of photo-induced charge carriers in the two systems of nanoporous TiO2/conductive substrate were studied by the transient photovoltage technique. Various transient photovoltage responses were obtained when the laser beam was incident from the surface of the nanoporous TiO2 film (top illumination) or the TiO2/substrate interface (bottom illumination). A linear and a logarithmic dependence of the photovoltage amplitude on the excitation level were observed for top illumination and bottom illumination, respectively. The results indicate that diffusion is the major way for the separation of charge carriers in the nanoporous TiO2 film and that the excess carriers were separated by drift under the built-in electric field at the TiO2/substrate interfaces.
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影响因子：
3.2
作者：
Volodimyr Duzhko;F. Koch;T. Dittrich
通讯作者：
Volodimyr Duzhko;F. Koch;T. Dittrich
影响因子：
2.1
作者：
Qinglin Zhang;Dejun Wang;Xiao Wei;T. Xie;Ziheng Li;Yanhong Lin;Min Yang
通讯作者：
Qinglin Zhang;Dejun Wang;Xiao Wei;T. Xie;Ziheng Li;Yanhong Lin;Min Yang
影响因子：
0.7
作者：
B. Bednyi;N. V. Baidus;A. Tybulewicz
通讯作者：
B. Bednyi;N. V. Baidus;A. Tybulewicz
影响因子：
3.9
作者：
Lu, ZX;Zhou, L;Shen, P
通讯作者：
Shen, P
影响因子：
3.7
作者：
Duzhko, V;Timoshenko, VY;Dittrich, T
通讯作者：
Dittrich, T