A new method for directly locating single-event latchups using silicon pixel sensors in a gas detector-猫眼课题宝

一种在气体探测器中使用硅像素传感器直接定位单粒子闩锁的新方法

DOI：

10.1016/j.nima.2020.163697

发表时间：

2020-05

期刊：

Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment

影响因子：

1.4

通讯作者：

中科院分区：

物理与天体物理3区

文献类型：

作者：

Hua Pei;Zhen Wang;Ping Yang;Xiangming Sun;Chengxin Zhao;Dong Wang;Guangming Huang;Le Xiao;Daming Sun;Dongliang Zhang;Zili Li;Yan Fan;Chaosong Gao;Jun Liu

当高能重离子轰击集成电路的敏感器件时，极易引发单粒子闭锁效应。提高IC抗SEL能力的主要策略是彻底评估所有部件的灵敏度，这要求对SEL进行高精度定位。提出了一种利用硅像素传感器作为定位芯片，对单个重离子进行跟踪，通过离子径迹分析，获得对集成电路的攻击点的方法。该方法可以定位表面活性剂，并获得高精度的敏感部件的分布图。在本文中，我们使用Topmetal-II−传感器作为定位芯片，在我们的原型探测器中呈现了单个重离子的第一张图像。测试结果表明，该探测器对重离子的定位精度优于7 μ m，角分辨率优于0。3英里。如果采用高读出率的定位芯片，未来重离子束流的最大可测通量可达105离子闪烁（cm 2·s）。

Single-event latchups (SELs) are easily triggered when high-energy heavy ions attack the sensitive parts of integrated circuits (ICs). The main strategy to improve the ability of ICs to resist SELs is to thoroughly evaluate the sensitivities of all parts, which requires that the SEL be located with high accuracy. We have proposed a method of using silicon pixel sensors as the positioning chips to track single heavy ions and obtain the hit points attacked on an IC through analysis of ion tracks. The method can locate SELs and obtain a distribution map of sensitive parts with high accuracy. In this paper, we present the first image of a single heavy ion in our prototype detector using Topmetal-II− sensors as the positioning chips. The test results show that the detector can locate heavy ions with a position resolution better than 7 μ m and angular resolution better than 0. 3∘. The maximum measurable flux of the heavy ion beam can reach 1 0 5 ions∕(cm 2⋅ s) in future if a high-readout rate positioning chip is adopted.