Probing electrochemistry at the nanoscale: in situ TEM and STM characterizations of conducting filaments in memristive devices
Probing electrochemistry at the nanoscale: in situ TEM and STM characterizations of conducting filaments in memristive devices
复制标题
纳米尺度电化学探测：忆阻器件中导电丝的原位 TEM 和 STM 表征
DOI：
10.1007/s10832-017-0069-y
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发表时间：
2017-02
影响因子：
1.7
通讯作者：
A. J. Kenyon
中科院分区：
文献类型：
--
作者：
Yuchao Yang;Yasuo Takahashi;Atsushi Tsurumaki-Fukuchi;Masashi Arita;M. Moors;M. Buckwell;A. Mehonic;A. J. Kenyon
忆阻器或记忆器件是一种两端纳米离子系统，其电阻开关效应是由离子在纳米甚至原子尺度的受限空间中的离子输运和氧化还原反应引起的。对于记忆阻器在非易失性存储器、可重构逻辑和脑启发计算中的持续应用来说，理解这种局部化和不均匀的电化学过程是一项具有挑战性但至关重要的任务。在这里，我们给出了两种最强大的技术，它们能够在纳米尺度上探索电阻开关机制--基于电化学金属化和价态变化的记忆系统的透射电子显微镜，特别是原位电子显微镜和扫描隧道显微镜。这些研究提供了关于导电细丝甚至单个金属纳米团簇的尺寸、形态、组成、化学状态和生长/溶解动力学的丰富信息，极大地促进了对记忆开关潜在机制的理解。对循环操作的进一步表征导致了对性能下降的更多洞察，这对于继续向实际应用进行器件优化非常重要。
Memristors or memristive devices are two-terminal nanoionic systems whose resistance switching effects are induced by ion transport and redox reactions in confined spaces down to nanometer or even atomic scales. Understanding such localized and inhomogeneous electrochemical processes is a challenging but crucial task for continued applications of memristors in nonvolatile memory, reconfigurable logic, and brain inspired computing. Here we give a survey for two of the most powerful technologies that are capable of probing the resistance switching mechanisms at the nanoscale – transmission electron microscopy, especially in situ, and scanning tunneling microscopy, for memristive systems based on both electrochemical metallization and valence changes. These studies yield rich information about the size, morphology, composition, chemical state and growth/dissolution dynamics of conducting filaments and even individual metal nanoclusters, and have greatly facilitated the understanding of the underlying mechanisms of memristive switching. Further characterization of cyclic operations leads to additional insights into the degradation in performance, which is important for continued device optimization towards practical applications.
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影响因子：
3.5
作者：
I. Valov;R. Waser;J. Jameson;M. Kozicki
通讯作者：
I. Valov;R. Waser;J. Jameson;M. Kozicki
钛酸盐器件中电阻切换的原位 TEM 观察
影响因子：
4.6
作者：
Yang Y;Lü W;Yao Y;Sun J;Gu C;Gu L;Wang Y;Duan X;Yu R
通讯作者：
Yu R
影响因子：
3.2
作者：
Heiji Watanabe;T. Baba;M. Ichikawa
通讯作者：
Heiji Watanabe;T. Baba;M. Ichikawa
影响因子：
41.2
作者：
Szot, K;Speier, W;Waser, R
通讯作者：
Waser, R
影响因子：
64.8
作者：
Terabe, K;Hasegawa, T;Aono, M
通讯作者：
Aono, M