Single-electron and quantum confinement limits in length-scaled silicon nanowires
Single-electron and quantum confinement limits in length-scaled silicon nanowires
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长度尺度硅纳米线的单电子和量子限制限制
DOI：
10.1088/0957-4484/26/30/305203
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发表时间：
2015
期刊：
影响因子：
3.5
通讯作者：
Z. Durrani
中科院分区：
文献类型：
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作者：
Chen Wang;Mervyn E. Jones;Z. Durrani
量子效应将在未来的CMOS和“超越CMOS”技术中发挥重要作用。通过比较在未图案化的、宽度均匀的硅纳米线（SiNW）器件中形成的单电子晶体管，其核心宽度为1.5 -40 nm，栅极长度为1 μm和1.50 nm，我们展示了这些效应变得显著的条件。在室温下观察到了库仑阻塞漏源电流-电压特性和单电子电流随栅压的振荡。已测量了8-300 K范围内的详细电气特性。我们表明，虽然将纳米线栅极长度缩短到50 nm，将量子点的可能性降低到只有几个，但它增加了它们对电特性的影响。这明确地突出了量子效应对于理解名义上的“经典”SiNW器件的电性能的意义，以及它们对于新的量子效应“超越CMOS”器件的潜力。
Quantum-effects will play an important role in both future CMOS and ‘beyond CMOS’ technologies. By comparing single-electron transistors formed in un-patterned, uniform-width silicon nanowire (SiNW) devices with core widths from ∼5–40 nm, and gated lengths of 1 μm and ∼50 nm, we show conditions under which these effects become significant. Coulomb blockade drain–source current–voltage characteristics, and single-electron current oscillations with gate voltage have been observed at room temperature. Detailed electrical characteristics have been measured from 8–300 K. We show that while shortening the nanowire gate length to 50 nm reduces the likelihood of quantum dots to only a few, it increases their influence on the electrical characteristics. This highlights explicitly both the significance of quantum effects for understanding the electrical performance of nominally ‘classical’ SiNW devices and also their potential for new quantum effect ‘beyond CMOS’ devices.
影响因子：
4
作者：
Saitoh, M;Hiramoto, T
通讯作者：
Hiramoto, T
影响因子：
10.8
作者：
S. J. Shin;J. J. Lee-J.;H. J. Kang;J. Choi;S. Yang;Yasuo Takahashi;D. Hasko
通讯作者：
S. J. Shin;J. J. Lee-J.;H. J. Kang;J. Choi;S. Yang;Yasuo Takahashi;D. Hasko
悬浮S双量子点中增强电子-声子相互作用的实验观察
DOI：
--
发表时间：
2010
期刊：
Japanese Journal of Applied Physics Vol.49(in press)
影响因子：
--
作者：
Jun Ogi;T.Ferrus;Tetsuo Kodera;Yoshishige Tsuchiya;Ken Uchida;D.A.Williams;Shunri Oda
通讯作者：
Shunri Oda