Theoretical analysis and modeling of photoemission characteristics of GaAs nanowire array photocathodes

Theoretical analysis and modeling of photoemission characteristics of GaAs nanowire array photocathodes
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GaAs纳米线阵列光电阴极光电发射特性的理论分析与建模

DOI:
10.1088/2053-1591/2/9/095015
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发表时间:
2015-09
影响因子:
2.3
通讯作者:
Benkang Chang
Benkang Chang
中科院分区:
材料科学4区
文献类型:
--
作者:
Xiaojun Ding;Zhaoping Chen;Yijun Zhang;Benkang Chang

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砷化镓(GaAs)纳米线阵列(NWA)光电阴极具有独特的电学和光学特性。在研究GaAs纳米线的光子吸收、能带结构和电子输运特性的基础上,建立了GaAs NWA光电阴极的光电发射模型。根据该模型,我们模拟和分析了有序GaAs NWA光电阴极的光电流、光谱响应和吸收特性。实验结果表明,光电流和光谱响应分别在20°和30°入射角处出现峰值。NWA阴极的这些特殊性质使其与薄膜阴极不同。分析了纳米线长度和直径对NWA阴极光电流的影响,发现纳米线的最佳高度为10 μm。该研究表明,NWA具有更高的吸光度和优异的电荷传输。因此,GaAs NWA光电阴极是电子源的优秀候选者。
Gallium arsenide (GaAs) nanowire array (NWA) photocathodes have unique electrical and optical properties. Based on studies about photon absorption, band structure, and electron transport properties of GaAs nanowire, a photoemission model for GaAs NWA photocathodes is established. According to the model, we simulate and analyze the photocurrent, spectral response, and absorption properties of ordered GaAs NWA photocathodes. The results present a very interesting phenomenon; the photocurrent and spectral response peak at incident angles of 20° and 30°, respectively. These special properties of NWA cathodes differentiate them from their thin film counterparts. We also analyze the effects of nanowire length and diameter on the photocurrent of NWA cathodes, and find the optimum height of the nanowires is 10 μm. This study shows that NWAs exhibit higher absorbance and excellent charge transport. Thus, GaAs NWA photocathodes are excellent candidates for electron sources.
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影响因子: 3.2
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