Microscopic analysis of carbon phases induced by femtosecond laser irradiation on single-crystal SiC
Microscopic analysis of carbon phases induced by femtosecond laser irradiation on single-crystal SiC
复制标题
飞秒激光照射单晶 SiC 诱导碳相的显微分析
DOI:
10.1007/s00339-010-5786-x
复制
发表时间:
2010
期刊:
影响因子:
--
通讯作者:
A. Yoshida
中科院分区:
文献类型:
--
作者:
T. Tomita;T. Okada;H. Kawahara;Ryota Kumai;S. Matsuo;S. Hashimoto;M. Kawamoto;M. Yamaguchi;S. Ueno;Emi Shindou;A. Yoshida
Elemental analysis of femtosecond laser-induced modified region was carried out by transmission electron microscopy and Raman spectroscopy. The relative Raman intensities of a-SiC were higher in the peripheral region of laser irradiated spot where the fine ripple was formed. On the contrary, the relative Raman intensities of a-Si were higher in the central region where the coarse ripple was formed. This result suggests that the material migration has strongly occurred in the higher fluence region. On the other hand, the mapping of carbon atoms in the topmost amorphous layer of laser induced periodic structures did not show any significant segregation. In addition, Raman spectroscopic analysis showed that the domain size of carbon was very small (< 1 nm). From these facts, it was found that the carbon atoms were uniformly distributed in the topmost amorphous layer and were randomly connected without forming any observable fine particles.
影响因子:
1.5
作者:
T. Tomita;K. Kinoshita;S. Matsuo;S. Hashimoto
通讯作者:
T. Tomita;K. Kinoshita;S. Matsuo;S. Hashimoto
DOI:
10.1007/s00339-002-1979-2
发表时间:
2003-04-01
影响因子:
2.7
作者:
Yasumaru, N;Miyazaki, K;Kiuchi, J
通讯作者:
Kiuchi, J
DOI:
--
发表时间:
2006
期刊:
影响因子:
--
作者:
K. Kimura;J. Kanasaki;K. Tanimura
通讯作者:
K. Tanimura