Confinement - assisted shock-wave-induced thin-film delamination (SWIFD) of copper indium gallium diselenide (CIGS) on a flexible substrate

Confinement - assisted shock-wave-induced thin-film delamination (SWIFD) of copper indium gallium diselenide (CIGS) on a flexible substrate
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柔性基板上铜铟镓二硒 (CIGS) 的约束辅助冲击波诱导薄膜分层 (SWIFD)

DOI:
10.1016/j.apsusc.2017.07.226
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发表时间:
2017
影响因子:
6.7
通讯作者:
Zimmer
Zimmer
中科院分区:
材料科学1区
文献类型:
--
作者:
Lorenz;Pierre;Zagoranskiy;Ehrhardt;Martin;Zimmer

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在不影响和损坏活性层功能的情况下对 CIGS(铜铟镓(二)硒化物)太阳能电池材料进行激光结构化对于激光方法来说是一个挑战。由于激光吸收与功能层去除过程的空间分离,冲击波诱导薄膜分层 (SWIFD) 工艺允许在不进行热修改的情况下进行结构化。在本研究中,研究了 CIGS 太阳能电池堆的 SWIFD 结构。用KrF-准分子激光照射聚酰亚胺的背面。激光诱导烧蚀过程产生横向冲击波,冲击波与层-基底界面的相互作用导致分层过程。研究了水限制对 SWIFD 过程的影响,其中基板的背面覆盖有约 2 毫米厚的水层。对所得的表面形貌进行了分析和讨论。在足够数量的激光脉冲 N 和激光注量 Φ 下,可以选择性地从 Mo 背接触去除 CIGS 层。水的限制以及激光束尺寸 A0 和 N 的增加,导致必要的最小激光注量 Φth 的减少。此外,分层的 CIGS 面积随着 Φ、N 和 A0 的增加而增加。
The laser structuring of CIGS (copper indium gallium (di)selenide) solar cell material without influence and damaging the functionality of the active layer is a challenge for laser methods The shock-wave-induced thin-film delamination (SWIFD) process allows structuring without thermal modifications due to a spatial separation of the laser absorption from the functional layer removal process. In the present study, SWIFD structuring of CIGS solar cell stacks was investigated. The rear side of the polyimide was irradiated with a KrF-Excimer laser. The laser-induced ablation process generates a traverse shock wave, and the interaction of the shock wave with the layer-substrate interface results in a delamination process. The effect of a water confinement on the SWIFD process was studied where the rear side of the substrate was covered with a ∼2 mm thick water layer. The resultant surface morphology was analysed and discussed. At a sufficient number of laser pulses N and laser fluences Φ, the CIGS layer can be selectively removed from the Mo back contact. The water confinement, as well as the increasing laser beam size A0and N, results in the reduction of the necessary minimal laser fluence Φth. Further, the delaminated CIGS area increased with increasing Φ, N, and A0.
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