Growth properties and resistive switching effects of diamond-like carbon films deposited using a linear ion source

Growth properties and resistive switching effects of diamond-like carbon films deposited using a linear ion source
复制标题

使用线性离子源沉积的类金刚石碳膜的生长特性和电阻切换效应

DOI:
10.1116/1.4803741
复制
发表时间:
2013-05
影响因子:
1.4
通讯作者:
Wang, Aiying
Wang, Aiying
中科院分区:
工程技术4区
文献类型:
--
作者:
Dai, Wei;Ke, Peiling;Wang, Aiying

文献摘要

参考文献

被引文献

相似文献

采用阳极层线性离子束源,以乙炔为前驱体,在不同的负偏压下制备了类金刚石薄膜。研究了沉积态DLC膜的生长特性、微观结构、力学性能和电阻开关行为随偏压的变化规律。结果表明,通过调节偏压可以改变薄膜中碳原子的成键结构(sp3/sp2碳杂化键)。sp3/sp2比值最初随着偏置电压的增加而增加,然后一旦偏置电压超过−100 V就下降。薄膜硬度和残余应力在不同偏压下的变化与sp3键分数的曲线相似,表明DLC薄膜的残余应力和机械性能高度依赖于sp3-C键合结构。通过Cu/DLC/Pt电池结构研究了DLC膜的阻变特性。结果表明,偏置电压具有一定的...
Diamond-like carbon (DLC) films were prepared using an anode-layer linear ion beam source with C2H2 as the precursor and various negative bias voltages. The growth properties, microstructures, mechanical properties, and the resistive switching behaviors of the as-deposited DLC films were investigated as a function of bias voltage. The results showed that adjusting the bias voltage could vary the carbon atomic bonding structure (sp3/sp2 carbon hybridized bonding) of the films. The sp3/sp2 ratio initially increased as bias voltage increased and then decreased once the bias voltage exceeded −100 V. The variations in the film hardness and residual stress at different bias voltages were similar in profile to the sp3 bond fractions, indicating that both the residual stress and the mechanical properties of the DLC films were highly dependent on sp3-C bonding structures. The resistive switching characteristics of the DLC films were studied via a Cu/DLC/Pt cell structure. It was found that the bias voltages had a ...
DOI: 10.1088/1367-2630/13/1/013020
发表时间: 2011
影响因子: 3.3
作者:
A. Sebastian;A. Pauza;C. Rossel;R. Shelby;Arantxa Fraile Rodríguez;H. Pozidis;E. Eleftheriou
通讯作者: A. Sebastian;A. Pauza;C. Rossel;R. Shelby;Arantxa Fraile Rodríguez;H. Pozidis;E. Eleftheriou
DOI: 10.1116/1.3077271
发表时间: 2009-05
影响因子: 1.4
作者:
W. Feng;Chau-Hsiang Wang;H. Cheng;S. Chiou;C. Chen;K. Ou
通讯作者: W. Feng;Chau-Hsiang Wang;H. Cheng;S. Chiou;C. Chen;K. Ou
DOI: 10.1016/j.tsf.2004.08.042
发表时间: 2005-03-22
期刊: THIN SOLID FILMS
影响因子: 2.1
作者:
Kok, YN;Hovsepian, PE;Petrov, I
通讯作者: Petrov, I
DOI: 10.1063/1.2821507
发表时间: 2008-02
期刊: The Review of scientific instruments
影响因子: --
作者:
D. Park;Ji-Hwan Kim;Y. Ermakov;Won‐Kook Choi
通讯作者: D. Park;Ji-Hwan Kim;Y. Ermakov;Won‐Kook Choi
DOI: 10.1016/0040-6090(95)06912-7
发表时间: 1995-12
期刊: Thin Solid Films
影响因子: 2.1
作者:
V. Palshin;E. Meletis;S. Ves;S. Logothetidis
通讯作者: V. Palshin;E. Meletis;S. Ves;S. Logothetidis