Growth properties and resistive switching effects of diamond-like carbon films deposited using a linear ion source
Growth properties and resistive switching effects of diamond-like carbon films deposited using a linear ion source
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使用线性离子源沉积的类金刚石碳膜的生长特性和电阻切换效应
DOI:
10.1116/1.4803741
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发表时间:
2013-05
影响因子:
1.4
通讯作者:
Wang, Aiying
中科院分区:
文献类型:
--
作者:
Dai, Wei;Ke, Peiling;Wang, Aiying
Diamond-like carbon (DLC) films were prepared using an anode-layer linear ion beam source with C2H2 as the precursor and various negative bias voltages. The growth properties, microstructures, mechanical properties, and the resistive switching behaviors of the as-deposited DLC films were investigated as a function of bias voltage. The results showed that adjusting the bias voltage could vary the carbon atomic bonding structure (sp3/sp2 carbon hybridized bonding) of the films. The sp3/sp2 ratio initially increased as bias voltage increased and then decreased once the bias voltage exceeded −100 V. The variations in the film hardness and residual stress at different bias voltages were similar in profile to the sp3 bond fractions, indicating that both the residual stress and the mechanical properties of the DLC films were highly dependent on sp3-C bonding structures. The resistive switching characteristics of the DLC films were studied via a Cu/DLC/Pt cell structure. It was found that the bias voltages had a ...
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影响因子:
3.3
作者:
A. Sebastian;A. Pauza;C. Rossel;R. Shelby;Arantxa Fraile Rodríguez;H. Pozidis;E. Eleftheriou
通讯作者:
A. Sebastian;A. Pauza;C. Rossel;R. Shelby;Arantxa Fraile Rodríguez;H. Pozidis;E. Eleftheriou
影响因子:
1.4
作者:
W. Feng;Chau-Hsiang Wang;H. Cheng;S. Chiou;C. Chen;K. Ou
通讯作者:
W. Feng;Chau-Hsiang Wang;H. Cheng;S. Chiou;C. Chen;K. Ou
影响因子:
2.1
作者:
Kok, YN;Hovsepian, PE;Petrov, I
通讯作者:
Petrov, I
DOI:
10.1063/1.2821507
发表时间:
2008-02
期刊:
The Review of scientific instruments
影响因子:
--
作者:
D. Park;Ji-Hwan Kim;Y. Ermakov;Won‐Kook Choi
通讯作者:
D. Park;Ji-Hwan Kim;Y. Ermakov;Won‐Kook Choi
影响因子:
2.1
作者:
V. Palshin;E. Meletis;S. Ves;S. Logothetidis
通讯作者:
V. Palshin;E. Meletis;S. Ves;S. Logothetidis